JPS5333582A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5333582A
JPS5333582A JP10779776A JP10779776A JPS5333582A JP S5333582 A JPS5333582 A JP S5333582A JP 10779776 A JP10779776 A JP 10779776A JP 10779776 A JP10779776 A JP 10779776A JP S5333582 A JPS5333582 A JP S5333582A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
clean
structural body
parts formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10779776A
Other languages
Japanese (ja)
Other versions
JPS6019146B2 (en
Inventor
Toshio Okubo
Kiichiro Mukai
Atsushi Saiki
Ichisuke Yamanaka
Shigeru Takahashi
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51107797A priority Critical patent/JPS6019146B2/en
Publication of JPS5333582A publication Critical patent/JPS5333582A/en
Publication of JPS6019146B2 publication Critical patent/JPS6019146B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a clean Al surface on the exposed metal surface of the opening parts formed, in a resin insulation method wiring structural body.
JP51107797A 1976-09-10 1976-09-10 Manufacturing method of semiconductor device Expired JPS6019146B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51107797A JPS6019146B2 (en) 1976-09-10 1976-09-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51107797A JPS6019146B2 (en) 1976-09-10 1976-09-10 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5333582A true JPS5333582A (en) 1978-03-29
JPS6019146B2 JPS6019146B2 (en) 1985-05-14

Family

ID=14468264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51107797A Expired JPS6019146B2 (en) 1976-09-10 1976-09-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6019146B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5087781A (en) * 1973-12-07 1975-07-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5087781A (en) * 1973-12-07 1975-07-15

Also Published As

Publication number Publication date
JPS6019146B2 (en) 1985-05-14

Similar Documents

Publication Publication Date Title
JPS5216147A (en) Pacage method for surface elastic wave element
JPS5333582A (en) Production of semiconductor device
JPS51142988A (en) Semiconductor devices
JPS5363871A (en) Production of semiconductor device
JPS52117066A (en) Semiconductor device
JPS51121272A (en) Manufacturing method for semiconductor devices
JPS5427772A (en) Production of semiconductor devices
JPS5261960A (en) Production of semiconductor device
JPS52108583A (en) Method for cleaning metal chips
JPS5379469A (en) Manufacture of glass mold type semiconductor rectifying device
JPS51111089A (en) Semiconductor device manufucturing process
JPS5249783A (en) Semiconductor device and process for production of same
JPS524780A (en) Manufacturing method of semiconductor equipment
JPS5383462A (en) Production of semiconductor device
JPS52103978A (en) Manufacture of conduction body in semiconductor device
JPS52156583A (en) Electrode formation method in semiconductor device
JPS5344181A (en) Production of semiconductor device
JPS53124077A (en) Chucking for wafer
JPS51150286A (en) Production method of semiconductor device
JPS5242369A (en) Process for production of semiconductor device
JPS52143767A (en) Production of semiconductor device
JPS52141592A (en) Process of semiconductor device
JPS526082A (en) Production method of resin-seal type semiconductor device
JPS5312279A (en) Production of semiconductor device
JPS5313874A (en) Production of semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080413

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 8

Free format text: PAYMENT UNTIL: 20090413

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090413

Year of fee payment: 8

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 8

Free format text: PAYMENT UNTIL: 20090413

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090413

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100413

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 10

Free format text: PAYMENT UNTIL: 20110413

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 10

Free format text: PAYMENT UNTIL: 20110413

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120413

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120413

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130413

Year of fee payment: 12

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130413

Year of fee payment: 12

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140413

Year of fee payment: 13