JPS5333080A - Light emitting semiconductor device and its production - Google Patents

Light emitting semiconductor device and its production

Info

Publication number
JPS5333080A
JPS5333080A JP10759076A JP10759076A JPS5333080A JP S5333080 A JPS5333080 A JP S5333080A JP 10759076 A JP10759076 A JP 10759076A JP 10759076 A JP10759076 A JP 10759076A JP S5333080 A JPS5333080 A JP S5333080A
Authority
JP
Japan
Prior art keywords
production
light emitting
semiconductor device
emitting semiconductor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10759076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5433960B2 (cs
Inventor
Takashi Fukui
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10759076A priority Critical patent/JPS5333080A/ja
Publication of JPS5333080A publication Critical patent/JPS5333080A/ja
Publication of JPS5433960B2 publication Critical patent/JPS5433960B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP10759076A 1976-09-08 1976-09-08 Light emitting semiconductor device and its production Granted JPS5333080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10759076A JPS5333080A (en) 1976-09-08 1976-09-08 Light emitting semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10759076A JPS5333080A (en) 1976-09-08 1976-09-08 Light emitting semiconductor device and its production

Publications (2)

Publication Number Publication Date
JPS5333080A true JPS5333080A (en) 1978-03-28
JPS5433960B2 JPS5433960B2 (cs) 1979-10-24

Family

ID=14463002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10759076A Granted JPS5333080A (en) 1976-09-08 1976-09-08 Light emitting semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5333080A (cs)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562693A (en) * 1979-06-20 1981-01-12 Agency Of Ind Science & Technol Semiconductor laser device
JPS564293A (en) * 1979-06-25 1981-01-17 Agency Of Ind Science & Technol Manufacture of semiconductor laser device
JPS5636183A (en) * 1979-08-31 1981-04-09 Nec Corp Semiconductor laser and manufacture thereof
JPS5642393A (en) * 1979-09-12 1981-04-20 Nec Corp Semiconductor laser
JPS5645090A (en) * 1979-09-20 1981-04-24 Nec Corp Semiconductor laser
JPS58102586A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体発光装置
JPS58102588A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体発光装置
US5047364A (en) * 1988-06-27 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method for making a multi-point emission type semiconductor laser device
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562693A (en) * 1979-06-20 1981-01-12 Agency Of Ind Science & Technol Semiconductor laser device
JPS564293A (en) * 1979-06-25 1981-01-17 Agency Of Ind Science & Technol Manufacture of semiconductor laser device
JPS5636183A (en) * 1979-08-31 1981-04-09 Nec Corp Semiconductor laser and manufacture thereof
JPS5642393A (en) * 1979-09-12 1981-04-20 Nec Corp Semiconductor laser
JPS5645090A (en) * 1979-09-20 1981-04-24 Nec Corp Semiconductor laser
JPS58102586A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体発光装置
JPS58102588A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体発光装置
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser
US5047364A (en) * 1988-06-27 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method for making a multi-point emission type semiconductor laser device

Also Published As

Publication number Publication date
JPS5433960B2 (cs) 1979-10-24

Similar Documents

Publication Publication Date Title
JPS5247691A (en) Optical semiconductor device
JPS5333080A (en) Light emitting semiconductor device and its production
JPS52137279A (en) Semiconductor device for optical coupling
JPS52124885A (en) Semiconductor light emitting device
JPS5362489A (en) Production of semiconductor laser
JPS5427786A (en) Integrated light source
JPS5251955A (en) Optical semiconductor device
JPS52144989A (en) Semiconductor light emitting device
JPS5361986A (en) Semiconductor light emitting device
JPS5274292A (en) Semiconductor laser element
JPS51139787A (en) Semiconductor light emitting device
JPS53128288A (en) Semiconductor laser element and production of the same
JPS5255480A (en) Production of semiconductor light emitting element
JPS5329685A (en) Photo semiconductor device
JPS5376692A (en) Semiconductor light emitting device
JPS5311589A (en) Diffraction grating coupling type semiconductor laser
JPS5433748A (en) Optical integrated circuit of semiconductor
JPS52127086A (en) Uni-directional dfb laser
JPS5419384A (en) Production of semiconductor light emitting devices
JPS5391684A (en) Semiconductor laser
JPS5370769A (en) Production of semiconductor device
JPS5215280A (en) Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS52104072A (en) High voltage semiconductor device
JPS5252590A (en) Semiconductor light emitting device
JPS5254388A (en) Light emitting diode

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080317

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 9

Free format text: PAYMENT UNTIL: 20090317

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100317

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100317

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 11

Free format text: PAYMENT UNTIL: 20110317

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 11

Free format text: PAYMENT UNTIL: 20110317