JPS5318978A - Production of field effect type semiconductor device - Google Patents

Production of field effect type semiconductor device

Info

Publication number
JPS5318978A
JPS5318978A JP9342476A JP9342476A JPS5318978A JP S5318978 A JPS5318978 A JP S5318978A JP 9342476 A JP9342476 A JP 9342476A JP 9342476 A JP9342476 A JP 9342476A JP S5318978 A JPS5318978 A JP S5318978A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9342476A
Other languages
Japanese (ja)
Other versions
JPS6123672B2 (en
Inventor
Yutaka Hirano
Kiyobumi Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9342476A priority Critical patent/JPS5318978A/en
Publication of JPS5318978A publication Critical patent/JPS5318978A/en
Publication of JPS6123672B2 publication Critical patent/JPS6123672B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To simplify plating operations by so arrainging the process that simply necessitates consideration of sourcedrain electrode patterns without using the conductive layer that requires etching-away after plating.
COPYRIGHT: (C)1978,JPO&Japio
JP9342476A 1976-08-05 1976-08-05 Production of field effect type semiconductor device Granted JPS5318978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9342476A JPS5318978A (en) 1976-08-05 1976-08-05 Production of field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9342476A JPS5318978A (en) 1976-08-05 1976-08-05 Production of field effect type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5318978A true JPS5318978A (en) 1978-02-21
JPS6123672B2 JPS6123672B2 (en) 1986-06-06

Family

ID=14081908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9342476A Granted JPS5318978A (en) 1976-08-05 1976-08-05 Production of field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5318978A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950868A (en) * 1972-09-19 1974-05-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950868A (en) * 1972-09-19 1974-05-17

Also Published As

Publication number Publication date
JPS6123672B2 (en) 1986-06-06

Similar Documents

Publication Publication Date Title
JPS51123561A (en) Production method of semicondvctor device
JPS5237785A (en) Process for production of photovoltaic elements
JPS5318978A (en) Production of field effect type semiconductor device
JPS51123086A (en) Semicanductor device and its production process
JPS5279664A (en) Forming method for electrodes of semiconductor devices
JPS5279654A (en) Production of semiconductor device
JPS51111071A (en) Semiconductor equipment
JPS51123582A (en) Semiconductor device production system
JPS51151073A (en) Method to adjust the position of an mask for an integrated circuit
JPS5267271A (en) Formation of through-hole onto semiconductor substrate
JPS5222888A (en) Semiconductor unit manufacturing system
JPS51138166A (en) Production method of semiconductor device
JPS5419367A (en) Production of semiconductor device
JPS51147184A (en) Method of mawufacturing of mosic circuit device
JPS5236975A (en) Process for production of semiconductor device
JPS51118369A (en) Manufacturing process for simiconduator unit
JPS5242368A (en) Process for production of semiconductor device
JPS51150286A (en) Production method of semiconductor device
JPS51147958A (en) Method for forming metal electrode
JPS51147190A (en) Method of manufacturing of integurated circuit for lsi
JPS51112266A (en) Semiconductor device production method
JPS5283063A (en) Production of semiconductor device
JPS51137383A (en) Semi conductor wafer evaluation
JPS51120994A (en) Method for production of tungsten chloride
JPS5278384A (en) Production of semiconductor integrated circuit device