JPS5317067A - Vapor phase epitaxial growth method - Google Patents

Vapor phase epitaxial growth method

Info

Publication number
JPS5317067A
JPS5317067A JP9117376A JP9117376A JPS5317067A JP S5317067 A JPS5317067 A JP S5317067A JP 9117376 A JP9117376 A JP 9117376A JP 9117376 A JP9117376 A JP 9117376A JP S5317067 A JPS5317067 A JP S5317067A
Authority
JP
Japan
Prior art keywords
vapor phase
epitaxial growth
growth method
phase epitaxial
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9117376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5442583B2 (enExample
Inventor
Koichi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9117376A priority Critical patent/JPS5317067A/ja
Publication of JPS5317067A publication Critical patent/JPS5317067A/ja
Publication of JPS5442583B2 publication Critical patent/JPS5442583B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9117376A 1976-07-30 1976-07-30 Vapor phase epitaxial growth method Granted JPS5317067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9117376A JPS5317067A (en) 1976-07-30 1976-07-30 Vapor phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9117376A JPS5317067A (en) 1976-07-30 1976-07-30 Vapor phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5317067A true JPS5317067A (en) 1978-02-16
JPS5442583B2 JPS5442583B2 (enExample) 1979-12-14

Family

ID=14019065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9117376A Granted JPS5317067A (en) 1976-07-30 1976-07-30 Vapor phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5317067A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198619A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
US4507169A (en) * 1981-06-29 1985-03-26 Fujitsu Limited Method and apparatus for vapor phase growth of a semiconductor
JPH03296289A (ja) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp 半導体光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198619A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
US4507169A (en) * 1981-06-29 1985-03-26 Fujitsu Limited Method and apparatus for vapor phase growth of a semiconductor
JPH03296289A (ja) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp 半導体光素子

Also Published As

Publication number Publication date
JPS5442583B2 (enExample) 1979-12-14

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