JPS5442583B2 - - Google Patents
Info
- Publication number
- JPS5442583B2 JPS5442583B2 JP9117376A JP9117376A JPS5442583B2 JP S5442583 B2 JPS5442583 B2 JP S5442583B2 JP 9117376 A JP9117376 A JP 9117376A JP 9117376 A JP9117376 A JP 9117376A JP S5442583 B2 JPS5442583 B2 JP S5442583B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9117376A JPS5317067A (en) | 1976-07-30 | 1976-07-30 | Vapor phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9117376A JPS5317067A (en) | 1976-07-30 | 1976-07-30 | Vapor phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5317067A JPS5317067A (en) | 1978-02-16 |
| JPS5442583B2 true JPS5442583B2 (enExample) | 1979-12-14 |
Family
ID=14019065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9117376A Granted JPS5317067A (en) | 1976-07-30 | 1976-07-30 | Vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5317067A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57198619A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Vapor growth of compound semiconductor |
| JPS582294A (ja) * | 1981-06-29 | 1983-01-07 | Fujitsu Ltd | 気相成長方法 |
| JP2553731B2 (ja) * | 1990-04-13 | 1996-11-13 | 三菱電機株式会社 | 半導体光素子 |
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1976
- 1976-07-30 JP JP9117376A patent/JPS5317067A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5317067A (en) | 1978-02-16 |