JPS53148965A - Electrode formation method for semiconductor device - Google Patents
Electrode formation method for semiconductor deviceInfo
- Publication number
- JPS53148965A JPS53148965A JP6328077A JP6328077A JPS53148965A JP S53148965 A JPS53148965 A JP S53148965A JP 6328077 A JP6328077 A JP 6328077A JP 6328077 A JP6328077 A JP 6328077A JP S53148965 A JPS53148965 A JP S53148965A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- formation method
- electrode formation
- electrode
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To produce a thick Al electrode featuring a high-reliability by having a lift-off through utilization of the gold adhesion force difference against Si and SiO2.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6328077A JPS53148965A (en) | 1977-06-01 | 1977-06-01 | Electrode formation method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6328077A JPS53148965A (en) | 1977-06-01 | 1977-06-01 | Electrode formation method for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53148965A true JPS53148965A (en) | 1978-12-26 |
Family
ID=13224741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6328077A Pending JPS53148965A (en) | 1977-06-01 | 1977-06-01 | Electrode formation method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53148965A (en) |
-
1977
- 1977-06-01 JP JP6328077A patent/JPS53148965A/en active Pending
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