JPS53144692A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53144692A
JPS53144692A JP6025277A JP6025277A JPS53144692A JP S53144692 A JPS53144692 A JP S53144692A JP 6025277 A JP6025277 A JP 6025277A JP 6025277 A JP6025277 A JP 6025277A JP S53144692 A JPS53144692 A JP S53144692A
Authority
JP
Japan
Prior art keywords
film
memory cell
conductive thin
semiconductor device
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6025277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120148B2 (enrdf_load_stackoverflow
Inventor
Toshio Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6025277A priority Critical patent/JPS53144692A/ja
Publication of JPS53144692A publication Critical patent/JPS53144692A/ja
Publication of JPS6120148B2 publication Critical patent/JPS6120148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
JP6025277A 1977-05-23 1977-05-23 Semiconductor device Granted JPS53144692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6025277A JPS53144692A (en) 1977-05-23 1977-05-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6025277A JPS53144692A (en) 1977-05-23 1977-05-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53144692A true JPS53144692A (en) 1978-12-16
JPS6120148B2 JPS6120148B2 (enrdf_load_stackoverflow) 1986-05-21

Family

ID=13136791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6025277A Granted JPS53144692A (en) 1977-05-23 1977-05-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53144692A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891658A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体装置
US6413818B1 (en) 1999-10-08 2002-07-02 Macronix International Co., Ltd. Method for forming a contoured floating gate cell
US6544844B2 (en) 1999-10-08 2003-04-08 Macronix International Co., Ltd. Method for forming a flash memory cell having contoured floating gate surface

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891658A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体装置
US6413818B1 (en) 1999-10-08 2002-07-02 Macronix International Co., Ltd. Method for forming a contoured floating gate cell
US6544844B2 (en) 1999-10-08 2003-04-08 Macronix International Co., Ltd. Method for forming a flash memory cell having contoured floating gate surface
US6680506B2 (en) 1999-10-08 2004-01-20 Macronix International Co., Ltd. Method for forming a flash memory cell having contoured floating gate surface

Also Published As

Publication number Publication date
JPS6120148B2 (enrdf_load_stackoverflow) 1986-05-21

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