JPS53114349A - Impurity diffusing method - Google Patents

Impurity diffusing method

Info

Publication number
JPS53114349A
JPS53114349A JP2798377A JP2798377A JPS53114349A JP S53114349 A JPS53114349 A JP S53114349A JP 2798377 A JP2798377 A JP 2798377A JP 2798377 A JP2798377 A JP 2798377A JP S53114349 A JPS53114349 A JP S53114349A
Authority
JP
Japan
Prior art keywords
impurity diffusing
diffusing method
impurity
substrates
optimums
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2798377A
Other languages
Japanese (ja)
Inventor
Mitsuo Nanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2798377A priority Critical patent/JPS53114349A/en
Publication of JPS53114349A publication Critical patent/JPS53114349A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To form a high-density Sb diffusion layer, by arranging rough-surface substrates and semiconductor substrates at the interval of less than approximate 32mm and by controlling the current speed of the contained gas of Sb2O3 at their optimums.
COPYRIGHT: (C)1978,JPO&Japio
JP2798377A 1977-03-16 1977-03-16 Impurity diffusing method Pending JPS53114349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2798377A JPS53114349A (en) 1977-03-16 1977-03-16 Impurity diffusing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2798377A JPS53114349A (en) 1977-03-16 1977-03-16 Impurity diffusing method

Publications (1)

Publication Number Publication Date
JPS53114349A true JPS53114349A (en) 1978-10-05

Family

ID=12236077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2798377A Pending JPS53114349A (en) 1977-03-16 1977-03-16 Impurity diffusing method

Country Status (1)

Country Link
JP (1) JPS53114349A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016149507A (en) * 2015-02-13 2016-08-18 三菱電機株式会社 Semiconductor device manufacturing method, soar cell manufacturing method and solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016149507A (en) * 2015-02-13 2016-08-18 三菱電機株式会社 Semiconductor device manufacturing method, soar cell manufacturing method and solar cell

Similar Documents

Publication Publication Date Title
JPS5389374A (en) Production of semiconductor device
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS53114349A (en) Impurity diffusing method
JPS51128833A (en) Aeration method
JPS53142877A (en) Manufacture for compound semiconductor device
JPS546793A (en) Photo detector of semiconductor
JPS5228879A (en) Semiconductor device and method for its production
JPS51111518A (en) Controlling method of gas turbine
JPS5239371A (en) Method for selective diffusion
JPS53128978A (en) Impurity diffusion method
JPS53104159A (en) Impurity diffusing method
JPS5211860A (en) Liquid phase epitaxial device
JPS5378780A (en) Preparation for semiconductor device
JPS5395570A (en) Forming method of epitaxial layer
JPS5432991A (en) Manufacture of semiconductor
JPS522165A (en) Method of thermally diffusing selectively aluminum of semiconductor su bstrate
JPS5376A (en) Manufacture of semiconductor device
JPS51140559A (en) Impurities diffusing to iii-v group compound semi-conductor base plate
JPS53136958A (en) Selective impurity diffusion method into semiconductor substrate
JPS5422157A (en) Formation method of selective impurity diffusion region into iii-v group compound semiconductor
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS5226192A (en) Photo-conductive target and its manufacturing method
JPS53133380A (en) Manufacture of semiconductor element
JPS5211764A (en) Method of manufacturing semiconductor device
JPS5394869A (en) Manufacture of semiconductor device