JPS5310283A - 54)mos type semiconductor integrated circuit - Google Patents

54)mos type semiconductor integrated circuit

Info

Publication number
JPS5310283A
JPS5310283A JP8485176A JP8485176A JPS5310283A JP S5310283 A JPS5310283 A JP S5310283A JP 8485176 A JP8485176 A JP 8485176A JP 8485176 A JP8485176 A JP 8485176A JP S5310283 A JPS5310283 A JP S5310283A
Authority
JP
Japan
Prior art keywords
integrated circuit
type semiconductor
semiconductor integrated
mos type
nb2o5
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8485176A
Other languages
English (en)
Inventor
Toyoki Takemoto
Michihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8485176A priority Critical patent/JPS5310283A/ja
Publication of JPS5310283A publication Critical patent/JPS5310283A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8485176A 1976-07-15 1976-07-15 54)mos type semiconductor integrated circuit Pending JPS5310283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8485176A JPS5310283A (en) 1976-07-15 1976-07-15 54)mos type semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8485176A JPS5310283A (en) 1976-07-15 1976-07-15 54)mos type semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5310283A true JPS5310283A (en) 1978-01-30

Family

ID=13842291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8485176A Pending JPS5310283A (en) 1976-07-15 1976-07-15 54)mos type semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5310283A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866186U (ja) * 1981-10-30 1983-05-06 三菱重工業株式会社 複合ポンプ
JPS58176973A (ja) * 1982-04-12 1983-10-17 Toshiba Corp 半導体装置の製造方法
WO1984003992A1 (en) * 1983-03-31 1984-10-11 Matsushita Electric Ind Co Ltd Thin-film integrated device
JPS60242354A (ja) * 1984-05-16 1985-12-02 Sharp Corp Ｆｅｔ型センサ
EP0641027A1 (en) * 1992-05-13 1995-03-01 OHMI, Tadahiro Semiconductor device
US6492695B2 (en) * 1999-02-16 2002-12-10 Koninklijke Philips Electronics N.V. Semiconductor arrangement with transistor gate insulator
JP2004501857A (ja) * 2000-06-26 2004-01-22 ノース・キャロライナ・ステイト・ユニヴァーシティ マイクロエレクトロニクス、光学及び他の適用に使用するための新規な非晶質酸化物
US6927435B2 (en) * 2001-01-16 2005-08-09 Renesas Technology Corp. Semiconductor device and its production process

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866186U (ja) * 1981-10-30 1983-05-06 三菱重工業株式会社 複合ポンプ
JPS58176973A (ja) * 1982-04-12 1983-10-17 Toshiba Corp 半導体装置の製造方法
JPH0345537B2 (ja) * 1982-04-12 1991-07-11 Tokyo Shibaura Electric Co
WO1984003992A1 (en) * 1983-03-31 1984-10-11 Matsushita Electric Ind Co Ltd Thin-film integrated device
JPS60242354A (ja) * 1984-05-16 1985-12-02 Sharp Corp Ｆｅｔ型センサ
JPH0376860B2 (ja) * 1984-05-16 1991-12-06 Sharp Kk
EP0641027A1 (en) * 1992-05-13 1995-03-01 OHMI, Tadahiro Semiconductor device
EP0641027A4 (en) * 1992-05-13 1995-11-02 Tadahiro Ohmi SEMICONDUCTOR ARRANGEMENT.
US6492695B2 (en) * 1999-02-16 2002-12-10 Koninklijke Philips Electronics N.V. Semiconductor arrangement with transistor gate insulator
JP2004501857A (ja) * 2000-06-26 2004-01-22 ノース・キャロライナ・ステイト・ユニヴァーシティ マイクロエレクトロニクス、光学及び他の適用に使用するための新規な非晶質酸化物
US6927435B2 (en) * 2001-01-16 2005-08-09 Renesas Technology Corp. Semiconductor device and its production process

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