JPS5292486A - Manufacture of mis-type semiconductor device - Google Patents
Manufacture of mis-type semiconductor deviceInfo
- Publication number
- JPS5292486A JPS5292486A JP846176A JP846176A JPS5292486A JP S5292486 A JPS5292486 A JP S5292486A JP 846176 A JP846176 A JP 846176A JP 846176 A JP846176 A JP 846176A JP S5292486 A JPS5292486 A JP S5292486A
- Authority
- JP
- Japan
- Prior art keywords
- mis
- manufacture
- semiconductor device
- type semiconductor
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP846176A JPS605065B2 (ja) | 1976-01-30 | 1976-01-30 | Mis形半導体装置の製造方法 |
NL7700962A NL7700962A (nl) | 1976-01-30 | 1977-01-28 | Werkwijze voor de vervaardiging van een half- geleiderinrichting van het mis-type. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP846176A JPS605065B2 (ja) | 1976-01-30 | 1976-01-30 | Mis形半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5292486A true JPS5292486A (en) | 1977-08-03 |
JPS605065B2 JPS605065B2 (ja) | 1985-02-08 |
Family
ID=11693758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP846176A Expired JPS605065B2 (ja) | 1976-01-30 | 1976-01-30 | Mis形半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS605065B2 (ja) |
NL (1) | NL7700962A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155782A (en) * | 1978-05-26 | 1979-12-08 | Rockwell International Corp | Method of fabricating semiconductor |
JPS55165501U (ja) * | 1979-05-16 | 1980-11-28 | ||
JPS5718366A (en) * | 1980-07-09 | 1982-01-30 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5758361A (en) * | 1980-09-24 | 1982-04-08 | Nec Corp | Manufacture of mos type integrated circuit |
US9341596B1 (en) | 2014-12-22 | 2016-05-17 | International Business Machines Corporation | Annular gas ionization delta E-E detector |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2019425621A1 (en) | 2019-01-29 | 2021-07-22 | Sumitomo Electric Industries, Ltd. | Battery cell, cell stack, and redox flow battery |
-
1976
- 1976-01-30 JP JP846176A patent/JPS605065B2/ja not_active Expired
-
1977
- 1977-01-28 NL NL7700962A patent/NL7700962A/xx not_active Application Discontinuation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155782A (en) * | 1978-05-26 | 1979-12-08 | Rockwell International Corp | Method of fabricating semiconductor |
JPS55165501U (ja) * | 1979-05-16 | 1980-11-28 | ||
JPS6024004Y2 (ja) * | 1979-05-16 | 1985-07-17 | デイエツクスアンテナ株式会社 | アンテナの水平・垂直共用取付具 |
JPS5718366A (en) * | 1980-07-09 | 1982-01-30 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5758361A (en) * | 1980-09-24 | 1982-04-08 | Nec Corp | Manufacture of mos type integrated circuit |
US9341596B1 (en) | 2014-12-22 | 2016-05-17 | International Business Machines Corporation | Annular gas ionization delta E-E detector |
Also Published As
Publication number | Publication date |
---|---|
NL7700962A (nl) | 1977-08-02 |
JPS605065B2 (ja) | 1985-02-08 |
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