JPS5291661A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5291661A
JPS5291661A JP752776A JP752776A JPS5291661A JP S5291661 A JPS5291661 A JP S5291661A JP 752776 A JP752776 A JP 752776A JP 752776 A JP752776 A JP 752776A JP S5291661 A JPS5291661 A JP S5291661A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
connection
likes
interposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP752776A
Other languages
English (en)
Inventor
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP752776A priority Critical patent/JPS5291661A/ja
Publication of JPS5291661A publication Critical patent/JPS5291661A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
JP752776A 1976-01-28 1976-01-28 Semiconductor integrated circuit Pending JPS5291661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP752776A JPS5291661A (en) 1976-01-28 1976-01-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP752776A JPS5291661A (en) 1976-01-28 1976-01-28 Semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8251681A Division JPS5720449A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5291661A true JPS5291661A (en) 1977-08-02

Family

ID=11668242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP752776A Pending JPS5291661A (en) 1976-01-28 1976-01-28 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5291661A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103468A (en) * 1979-10-26 1981-08-18 Texas Instruments Inc Floating gate type programmable memory cell and method of manufacturing same
JPS5772366A (en) * 1980-08-27 1982-05-06 Siemens Ag Monolithic integrated circuit and method of driving same
JPS58121647A (ja) * 1982-01-13 1983-07-20 Fujitsu Ltd 半導体装置
JPS6050940A (ja) * 1983-08-31 1985-03-22 Toshiba Corp 半導体集積回路
JPH03204957A (ja) * 1990-08-31 1991-09-06 Toshiba Corp 半導体集積回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918437A (ja) * 1972-06-09 1974-02-18
JPS4919780A (ja) * 1972-06-14 1974-02-21

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918437A (ja) * 1972-06-09 1974-02-18
JPS4919780A (ja) * 1972-06-14 1974-02-21

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103468A (en) * 1979-10-26 1981-08-18 Texas Instruments Inc Floating gate type programmable memory cell and method of manufacturing same
JPS5772366A (en) * 1980-08-27 1982-05-06 Siemens Ag Monolithic integrated circuit and method of driving same
JPH0546103B2 (ja) * 1980-08-27 1993-07-13 Siemens Ag
JPS58121647A (ja) * 1982-01-13 1983-07-20 Fujitsu Ltd 半導体装置
JPS6050940A (ja) * 1983-08-31 1985-03-22 Toshiba Corp 半導体集積回路
JPH0584061B2 (ja) * 1983-08-31 1993-11-30 Tokyo Shibaura Electric Co
JPH03204957A (ja) * 1990-08-31 1991-09-06 Toshiba Corp 半導体集積回路

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