JPS5286058A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS5286058A
JPS5286058A JP214376A JP214376A JPS5286058A JP S5286058 A JPS5286058 A JP S5286058A JP 214376 A JP214376 A JP 214376A JP 214376 A JP214376 A JP 214376A JP S5286058 A JPS5286058 A JP S5286058A
Authority
JP
Japan
Prior art keywords
epitaxial growth
liquid phase
phase epitaxial
melt
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP214376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55902B2 (enrdf_load_stackoverflow
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP214376A priority Critical patent/JPS5286058A/ja
Publication of JPS5286058A publication Critical patent/JPS5286058A/ja
Publication of JPS55902B2 publication Critical patent/JPS55902B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP214376A 1976-01-12 1976-01-12 Liquid phase epitaxial growth Granted JPS5286058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP214376A JPS5286058A (en) 1976-01-12 1976-01-12 Liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP214376A JPS5286058A (en) 1976-01-12 1976-01-12 Liquid phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5286058A true JPS5286058A (en) 1977-07-16
JPS55902B2 JPS55902B2 (enrdf_load_stackoverflow) 1980-01-10

Family

ID=11521109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP214376A Granted JPS5286058A (en) 1976-01-12 1976-01-12 Liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5286058A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236099A (ja) * 1985-08-09 1987-02-17 New Japan Radio Co Ltd Ｓｉの液相成長法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63502559A (ja) * 1986-02-20 1988-09-29 ジエフエリス，グレゴリ− 昆虫および害虫捕獲器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236099A (ja) * 1985-08-09 1987-02-17 New Japan Radio Co Ltd Ｓｉの液相成長法

Also Published As

Publication number Publication date
JPS55902B2 (enrdf_load_stackoverflow) 1980-01-10

Similar Documents

Publication Publication Date Title
JPS5286058A (en) Liquid phase epitaxial growth
JPS52135264A (en) Liquid phase epitaxial growth method
JPS52115171A (en) Liquid phase epitaxial growing method
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5243362A (en) Liquid growth method
JPS542660A (en) Liquid-phase epitaxial growth method of compound semiconductor
JPS52109866A (en) Liquid epitaxial growing method
JPS5334465A (en) Manufacture for semiconductor epitaxial grown layer
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5323560A (en) Liquid phase epitaxial growth method
JPS52114269A (en) Selective liquid growing method
JPS52129277A (en) Liquid phase epitaxial growth method
JPS52155186A (en) Liquid phase growth of iii-v group semiconductor
JPS5286775A (en) Bebeling method for semiconductor substrate
JPS5361595A (en) Liquid phase epitaxial growing method for gaas-algaas
JPS5299067A (en) Semiconductor crystal multilayer continuous growing method
JPS52155189A (en) Multiple layer crystal growth
JPS52120763A (en) Silicon epitaxial growth method
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5399079A (en) Liquid phase epitaxial growth method
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS5261957A (en) Liquid phase epitaxial growth
JPS5376657A (en) Liquid phase epitaxial growth method
JPS5366163A (en) Selective growth method of semiconductor buried layer