JPS5280777A - Vapor growth process - Google Patents
Vapor growth processInfo
- Publication number
- JPS5280777A JPS5280777A JP15712275A JP15712275A JPS5280777A JP S5280777 A JPS5280777 A JP S5280777A JP 15712275 A JP15712275 A JP 15712275A JP 15712275 A JP15712275 A JP 15712275A JP S5280777 A JPS5280777 A JP S5280777A
- Authority
- JP
- Japan
- Prior art keywords
- growth process
- vapor growth
- wafers
- grow
- keeping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To cause a film having a desired thickness to grow accurately and repeatedly on wafers in a vapor phase by inserting a tube for keeping the wafers at specified intervals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15712275A JPS5280777A (en) | 1975-12-27 | 1975-12-27 | Vapor growth process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15712275A JPS5280777A (en) | 1975-12-27 | 1975-12-27 | Vapor growth process |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5280777A true JPS5280777A (en) | 1977-07-06 |
JPS5642135B2 JPS5642135B2 (en) | 1981-10-02 |
Family
ID=15642682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15712275A Granted JPS5280777A (en) | 1975-12-27 | 1975-12-27 | Vapor growth process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5280777A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131380A (en) * | 1973-04-18 | 1974-12-17 | ||
JPS5018470A (en) * | 1973-05-31 | 1975-02-26 |
-
1975
- 1975-12-27 JP JP15712275A patent/JPS5280777A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131380A (en) * | 1973-04-18 | 1974-12-17 | ||
JPS5018470A (en) * | 1973-05-31 | 1975-02-26 |
Also Published As
Publication number | Publication date |
---|---|
JPS5642135B2 (en) | 1981-10-02 |
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