JPS5278376A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5278376A
JPS5278376A JP15527775A JP15527775A JPS5278376A JP S5278376 A JPS5278376 A JP S5278376A JP 15527775 A JP15527775 A JP 15527775A JP 15527775 A JP15527775 A JP 15527775A JP S5278376 A JPS5278376 A JP S5278376A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
porous layer
high concentration
diffused region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15527775A
Other languages
Japanese (ja)
Inventor
Satoru Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15527775A priority Critical patent/JPS5278376A/en
Publication of JPS5278376A publication Critical patent/JPS5278376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain a process for production of semiconductor devices such as diodes having superior electrical characteristics and high volume productivity whereby a porous layer is formed only in a high concentration diffused region and the depth of said porous layer is accurately controlled by the diffusion depth of the high concentration diffused region.
JP15527775A 1975-12-25 1975-12-25 Production of semiconductor device Pending JPS5278376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15527775A JPS5278376A (en) 1975-12-25 1975-12-25 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15527775A JPS5278376A (en) 1975-12-25 1975-12-25 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5278376A true JPS5278376A (en) 1977-07-01

Family

ID=15602372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15527775A Pending JPS5278376A (en) 1975-12-25 1975-12-25 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5278376A (en)

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