JPS5277665A - Growth of boron phosphide semiconductor - Google Patents

Growth of boron phosphide semiconductor

Info

Publication number
JPS5277665A
JPS5277665A JP15441375A JP15441375A JPS5277665A JP S5277665 A JPS5277665 A JP S5277665A JP 15441375 A JP15441375 A JP 15441375A JP 15441375 A JP15441375 A JP 15441375A JP S5277665 A JPS5277665 A JP S5277665A
Authority
JP
Japan
Prior art keywords
boron phosphide
growth
phosphide semiconductor
semiconductor
pci
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15441375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS557690B2 (fa
Inventor
Katsuto Nagano
Kazuhiko Ihaya
Shozo Sasa
Takeshi Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP15441375A priority Critical patent/JPS5277665A/ja
Publication of JPS5277665A publication Critical patent/JPS5277665A/ja
Publication of JPS557690B2 publication Critical patent/JPS557690B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP15441375A 1975-12-24 1975-12-24 Growth of boron phosphide semiconductor Granted JPS5277665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15441375A JPS5277665A (en) 1975-12-24 1975-12-24 Growth of boron phosphide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15441375A JPS5277665A (en) 1975-12-24 1975-12-24 Growth of boron phosphide semiconductor

Publications (2)

Publication Number Publication Date
JPS5277665A true JPS5277665A (en) 1977-06-30
JPS557690B2 JPS557690B2 (fa) 1980-02-27

Family

ID=15583599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15441375A Granted JPS5277665A (en) 1975-12-24 1975-12-24 Growth of boron phosphide semiconductor

Country Status (1)

Country Link
JP (1) JPS5277665A (fa)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840695A (fa) * 1971-09-30 1973-06-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840695A (fa) * 1971-09-30 1973-06-14

Also Published As

Publication number Publication date
JPS557690B2 (fa) 1980-02-27

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS5277665A (en) Growth of boron phosphide semiconductor
JPS53108389A (en) Manufacture for semiconductor device
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS5326663A (en) Manu facture of semiconductor device
JPS5271172A (en) Growth of p type boron phosphide semiconductor
JPS5382163A (en) Semiconductor vapor phase growth method
JPS5328374A (en) Wafer production
JPS5232669A (en) Liquid-phase epitaxial growth method
JPS528769A (en) Semiconductor device
JPS51126049A (en) Compounded semi-conductor gaseous phase epitaxial growth method
JPS5436192A (en) Manufacture for semiconductor
JPS54586A (en) Production of semiconductor device
JPS52141565A (en) Manufacture of semiconductor unit
JPS533062A (en) Semiconductor crystal growth apparatus
JPS5255471A (en) Impurity doping method of gallium arsenide vapor growth crystal
JPS52109867A (en) Manufacture for semiconductor crystal
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS533063A (en) Liquid phase epitaxial growth
JPS5244193A (en) Epitaxial growth method
JPS52109866A (en) Liquid epitaxial growing method
JPS5353253A (en) Manufacture of semiconductor epitaxial growth layer
JPS53108277A (en) Forming method for p-type boron phosphide semiconductor
JPS5257096A (en) Method for fabricayion of gallium arsenide having steep distribution o f impurity concentration
JPS52116786A (en) Production of gallium compound crystal