JPS5272399A - Method and apparatus for growth of single crystals of al2o3 from gas p hase - Google Patents

Method and apparatus for growth of single crystals of al2o3 from gas p hase

Info

Publication number
JPS5272399A
JPS5272399A JP50147926A JP14792675A JPS5272399A JP S5272399 A JPS5272399 A JP S5272399A JP 50147926 A JP50147926 A JP 50147926A JP 14792675 A JP14792675 A JP 14792675A JP S5272399 A JPS5272399 A JP S5272399A
Authority
JP
Japan
Prior art keywords
single crystals
gas
hase
al2o3
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50147926A
Other languages
English (en)
Other versions
JPS5612279B2 (ja
Inventor
Masaru Ihara
Masayuki Chifuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50147926A priority Critical patent/JPS5272399A/ja
Priority to US05/749,099 priority patent/US4137108A/en
Publication of JPS5272399A publication Critical patent/JPS5272399A/ja
Publication of JPS5612279B2 publication Critical patent/JPS5612279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31616—Deposition of Al2O3
    • H01L21/3162—Deposition of Al2O3 on a silicon body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator
JP50147926A 1975-12-13 1975-12-13 Method and apparatus for growth of single crystals of al2o3 from gas p hase Granted JPS5272399A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50147926A JPS5272399A (en) 1975-12-13 1975-12-13 Method and apparatus for growth of single crystals of al2o3 from gas p hase
US05/749,099 US4137108A (en) 1975-12-13 1976-12-09 Process for producing a semiconductor device by vapor growth of single crystal Al2 O3

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50147926A JPS5272399A (en) 1975-12-13 1975-12-13 Method and apparatus for growth of single crystals of al2o3 from gas p hase

Publications (2)

Publication Number Publication Date
JPS5272399A true JPS5272399A (en) 1977-06-16
JPS5612279B2 JPS5612279B2 (ja) 1981-03-19

Family

ID=15441197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50147926A Granted JPS5272399A (en) 1975-12-13 1975-12-13 Method and apparatus for growth of single crystals of al2o3 from gas p hase

Country Status (2)

Country Link
US (1) US4137108A (ja)
JP (1) JPS5272399A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487698A (en) * 1977-12-26 1979-07-12 Fujitsu Ltd Single crystal alumina gas phase growing
JPS5990067U (ja) * 1982-12-09 1984-06-18 トヨタ自動車株式会社 車両用燃料タンク
JP2005252248A (ja) * 2004-02-05 2005-09-15 Nokodai Tlo Kk ＡｌＮエピタキシャル層の成長方法及び気相成長装置
JP2009105087A (ja) * 2007-10-19 2009-05-14 Tokyo Electron Ltd 半導体製造装置、半導体製造方法及び記憶媒体
JP2010265178A (ja) * 2004-02-05 2010-11-25 Nokodai Tlo Kk エピタキシャル層の気相成長装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582294A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd 気相成長方法
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition
JP3351477B2 (ja) * 1993-02-04 2002-11-25 理化学研究所 固体レーザー結晶薄膜作成方法および固体レーザー結晶薄膜作成装置
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP4790914B2 (ja) * 1999-05-13 2011-10-12 ヴィーコ・プロセス・イクウィップメント・インコーポレーテッド 基板上に材料をエピタキシャル成長させるための方法と装置
US7682557B2 (en) * 2006-12-15 2010-03-23 Smith International, Inc. Multiple processes of high pressures and temperatures for sintered bodies

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331716A (en) * 1962-06-04 1967-07-18 Philips Corp Method of manufacturing a semiconductor device by vapor-deposition
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
US3306768A (en) * 1964-01-08 1967-02-28 Motorola Inc Method of forming thin oxide films
US3421936A (en) * 1964-12-21 1969-01-14 Sprague Electric Co Silicon nitride coating on semiconductor and method
US3449147A (en) * 1965-03-22 1969-06-10 Lexington Lab Inc Epitaxially coating ruby with doped alumina
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
DE1589705A1 (de) * 1967-11-15 1970-04-30 Itt Ind Gmbh Deutsche Mehrere elektrische Funktionsstufen enthaltende integrierte Schaltung
US3740280A (en) * 1971-05-14 1973-06-19 Rca Corp Method of making semiconductor device
US3766637A (en) * 1972-05-04 1973-10-23 Rca Corp Method of making mos transistors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487698A (en) * 1977-12-26 1979-07-12 Fujitsu Ltd Single crystal alumina gas phase growing
JPS5990067U (ja) * 1982-12-09 1984-06-18 トヨタ自動車株式会社 車両用燃料タンク
JP2005252248A (ja) * 2004-02-05 2005-09-15 Nokodai Tlo Kk ＡｌＮエピタキシャル層の成長方法及び気相成長装置
JP2010265178A (ja) * 2004-02-05 2010-11-25 Nokodai Tlo Kk エピタキシャル層の気相成長装置
JP2009105087A (ja) * 2007-10-19 2009-05-14 Tokyo Electron Ltd 半導体製造装置、半導体製造方法及び記憶媒体

Also Published As

Publication number Publication date
JPS5612279B2 (ja) 1981-03-19
US4137108A (en) 1979-01-30

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