JPS51135472A - Creation of porous semi-conductors - Google Patents

Creation of porous semi-conductors

Info

Publication number
JPS51135472A
JPS51135472A JP6067575A JP6067575A JPS51135472A JP S51135472 A JPS51135472 A JP S51135472A JP 6067575 A JP6067575 A JP 6067575A JP 6067575 A JP6067575 A JP 6067575A JP S51135472 A JPS51135472 A JP S51135472A
Authority
JP
Japan
Prior art keywords
conductors
creation
porous semi
porus
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6067575A
Other languages
Japanese (ja)
Inventor
Tatsuyuki Tomioka
Noboru Yoshigami
Yoji Hamaguchi
Kiyoharu Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6067575A priority Critical patent/JPS51135472A/en
Publication of JPS51135472A publication Critical patent/JPS51135472A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: Supply of a porus silicon crystal free from the swelling after oxidization without previous removal of the porus surface.
COPYRIGHT: (C)1976,JPO&Japio
JP6067575A 1975-05-20 1975-05-20 Creation of porous semi-conductors Pending JPS51135472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6067575A JPS51135472A (en) 1975-05-20 1975-05-20 Creation of porous semi-conductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6067575A JPS51135472A (en) 1975-05-20 1975-05-20 Creation of porous semi-conductors

Publications (1)

Publication Number Publication Date
JPS51135472A true JPS51135472A (en) 1976-11-24

Family

ID=13149122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6067575A Pending JPS51135472A (en) 1975-05-20 1975-05-20 Creation of porous semi-conductors

Country Status (1)

Country Link
JP (1) JPS51135472A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613366A (en) * 1992-04-03 1994-01-21 Internatl Business Mach Corp <Ibm> Method and system for performing immersion scanning for forming porous silicon film and device
WO2003041147A1 (en) * 2001-11-08 2003-05-15 Tokyo Electron Limited Anodic oxidizer, anodic oxidation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102985A (en) * 1972-04-07 1973-12-24
JPS5016864B2 (en) * 1971-08-30 1975-06-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016864B2 (en) * 1971-08-30 1975-06-17
JPS48102985A (en) * 1972-04-07 1973-12-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613366A (en) * 1992-04-03 1994-01-21 Internatl Business Mach Corp <Ibm> Method and system for performing immersion scanning for forming porous silicon film and device
WO2003041147A1 (en) * 2001-11-08 2003-05-15 Tokyo Electron Limited Anodic oxidizer, anodic oxidation method
US7118663B2 (en) 2001-11-08 2006-10-10 Tokyo Electron Limited Anodic oxidizer, anodic oxidation method

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