JPS5269285A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5269285A
JPS5269285A JP50145720A JP14572075A JPS5269285A JP S5269285 A JPS5269285 A JP S5269285A JP 50145720 A JP50145720 A JP 50145720A JP 14572075 A JP14572075 A JP 14572075A JP S5269285 A JPS5269285 A JP S5269285A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
divergence
gaas
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50145720A
Other languages
English (en)
Inventor
Kunio Ito
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50145720A priority Critical patent/JPS5269285A/ja
Priority to CA266,842A priority patent/CA1067989A/en
Priority to US05/746,750 priority patent/US4144503A/en
Priority to GB50534/76A priority patent/GB1547180A/en
Publication of JPS5269285A publication Critical patent/JPS5269285A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP50145720A 1975-12-05 1975-12-05 Semiconductor laser device Pending JPS5269285A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50145720A JPS5269285A (en) 1975-12-05 1975-12-05 Semiconductor laser device
CA266,842A CA1067989A (en) 1975-12-05 1976-11-30 Semiconductor laser with a light guide
US05/746,750 US4144503A (en) 1975-12-05 1976-12-02 Semiconductor laser with light guide
GB50534/76A GB1547180A (en) 1975-12-05 1976-12-03 Semiconductor laser with light guide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50145720A JPS5269285A (en) 1975-12-05 1975-12-05 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5269285A true JPS5269285A (en) 1977-06-08

Family

ID=15391559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50145720A Pending JPS5269285A (en) 1975-12-05 1975-12-05 Semiconductor laser device

Country Status (4)

Country Link
US (1) US4144503A (ja)
JP (1) JPS5269285A (ja)
CA (1) CA1067989A (ja)
GB (1) GB1547180A (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7903197A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser
JPS59143109A (ja) * 1983-02-04 1984-08-16 Sumitomo Electric Ind Ltd 光集積回路
US4758092A (en) * 1986-03-04 1988-07-19 Stanford University Method and means for optical detection of charge density modulation in a semiconductor
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics
JPH04145414A (ja) * 1990-10-08 1992-05-19 Fujitsu Ltd 光導波路型波長フィルタ
US5872360A (en) * 1996-12-12 1999-02-16 Intel Corporation Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit
US5904486A (en) * 1997-09-30 1999-05-18 Intel Corporation Method for performing a circuit edit through the back side of an integrated circuit die
US6072179A (en) * 1998-08-07 2000-06-06 Intel Corporation Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit
US7602828B2 (en) * 2006-11-13 2009-10-13 Jds Uniphase Corporation Semiconductor laser diode with narrow lateral beam divergence

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2152464B1 (ja) * 1971-09-16 1974-05-31 Thomson Csf
US3968564A (en) * 1975-04-30 1976-07-13 Northern Electric Company Limited Alignment of optical fibers to light emitting diodes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1975 *

Also Published As

Publication number Publication date
GB1547180A (en) 1979-06-06
US4144503A (en) 1979-03-13
CA1067989A (en) 1979-12-11

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