JPS5342692A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS5342692A
JPS5342692A JP11816776A JP11816776A JPS5342692A JP S5342692 A JPS5342692 A JP S5342692A JP 11816776 A JP11816776 A JP 11816776A JP 11816776 A JP11816776 A JP 11816776A JP S5342692 A JPS5342692 A JP S5342692A
Authority
JP
Japan
Prior art keywords
semiconductor device
compound semiconductor
laser
carriers
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11816776A
Other languages
Japanese (ja)
Other versions
JPS606119B2 (en
Inventor
Rangu.Roi
Kuniaki Iwamoto
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51118167A priority Critical patent/JPS606119B2/en
Publication of JPS5342692A publication Critical patent/JPS5342692A/en
Publication of JPS606119B2 publication Critical patent/JPS606119B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make a device including a distribution feedback type laser or distribution Bragg type reflecting mirror laser of substantially small loss by making ingenious use of the phenomenon in which forbidden band width is reduced by free carriers or excitation carriers.
JP51118167A 1976-09-30 1976-09-30 Composite semiconductor device Expired JPS606119B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51118167A JPS606119B2 (en) 1976-09-30 1976-09-30 Composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51118167A JPS606119B2 (en) 1976-09-30 1976-09-30 Composite semiconductor device

Publications (2)

Publication Number Publication Date
JPS5342692A true JPS5342692A (en) 1978-04-18
JPS606119B2 JPS606119B2 (en) 1985-02-15

Family

ID=14729761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51118167A Expired JPS606119B2 (en) 1976-09-30 1976-09-30 Composite semiconductor device

Country Status (1)

Country Link
JP (1) JPS606119B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5677212U (en) * 1979-11-22 1981-06-23
JPS5844785A (en) * 1981-08-27 1983-03-15 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS5895370U (en) * 1981-12-22 1983-06-28 井関農機株式会社 Operating device in mobile vehicle
JPS60133782A (en) * 1983-12-21 1985-07-16 Nec Corp Semiconductor laser
JPS60145692A (en) * 1984-01-10 1985-08-01 Nec Corp Single axial mode semiconductor laser
JPS60189981A (en) * 1984-03-12 1985-09-27 Nec Corp Single-axial mode semiconductor laser
JPS6232680A (en) * 1985-08-05 1987-02-12 Nec Corp Integrated type semiconductor laser
JPH0242784A (en) * 1988-08-02 1990-02-13 Nec Corp Optical integrated element of semiconductor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5677212U (en) * 1979-11-22 1981-06-23
JPS5844785A (en) * 1981-08-27 1983-03-15 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS5895370U (en) * 1981-12-22 1983-06-28 井関農機株式会社 Operating device in mobile vehicle
JPS60133782A (en) * 1983-12-21 1985-07-16 Nec Corp Semiconductor laser
JPS60145692A (en) * 1984-01-10 1985-08-01 Nec Corp Single axial mode semiconductor laser
JPS60189981A (en) * 1984-03-12 1985-09-27 Nec Corp Single-axial mode semiconductor laser
JPS6232680A (en) * 1985-08-05 1987-02-12 Nec Corp Integrated type semiconductor laser
JPH0242784A (en) * 1988-08-02 1990-02-13 Nec Corp Optical integrated element of semiconductor

Also Published As

Publication number Publication date
JPS606119B2 (en) 1985-02-15

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