JPS5268897A - Etching of silicon dioxide film - Google Patents

Etching of silicon dioxide film

Info

Publication number
JPS5268897A
JPS5268897A JP50145698A JP14569875A JPS5268897A JP S5268897 A JPS5268897 A JP S5268897A JP 50145698 A JP50145698 A JP 50145698A JP 14569875 A JP14569875 A JP 14569875A JP S5268897 A JPS5268897 A JP S5268897A
Authority
JP
Japan
Prior art keywords
etching
silicon dioxide
dioxide film
film
economically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50145698A
Other languages
Japanese (ja)
Inventor
Haruhiko Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50145698A priority Critical patent/JPS5268897A/en
Publication of JPS5268897A publication Critical patent/JPS5268897A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To etch economically and precisely SiO2 film without photoresist.
JP50145698A 1975-12-06 1975-12-06 Etching of silicon dioxide film Pending JPS5268897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50145698A JPS5268897A (en) 1975-12-06 1975-12-06 Etching of silicon dioxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50145698A JPS5268897A (en) 1975-12-06 1975-12-06 Etching of silicon dioxide film

Publications (1)

Publication Number Publication Date
JPS5268897A true JPS5268897A (en) 1977-06-08

Family

ID=15391029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50145698A Pending JPS5268897A (en) 1975-12-06 1975-12-06 Etching of silicon dioxide film

Country Status (1)

Country Link
JP (1) JPS5268897A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
US4498951A (en) * 1981-10-09 1985-02-12 Hitachi, Ltd. Method of manufacturing single-crystal film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498951A (en) * 1981-10-09 1985-02-12 Hitachi, Ltd. Method of manufacturing single-crystal film
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices

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