JPS5265693A - Twin waveguide diode laser - Google Patents

Twin waveguide diode laser

Info

Publication number
JPS5265693A
JPS5265693A JP51141084A JP14108476A JPS5265693A JP S5265693 A JPS5265693 A JP S5265693A JP 51141084 A JP51141084 A JP 51141084A JP 14108476 A JP14108476 A JP 14108476A JP S5265693 A JPS5265693 A JP S5265693A
Authority
JP
Japan
Prior art keywords
diode laser
twin waveguide
waveguide diode
twin
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51141084A
Other languages
English (en)
Inventor
Dei Baanamu Robaato
Aaru Saifuresu Donarudo
Sutoreifuaa Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPS5265693A publication Critical patent/JPS5265693A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP51141084A 1975-11-24 1976-11-24 Twin waveguide diode laser Pending JPS5265693A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/634,682 US4045749A (en) 1975-11-24 1975-11-24 Corrugation coupled twin guide laser

Publications (1)

Publication Number Publication Date
JPS5265693A true JPS5265693A (en) 1977-05-31

Family

ID=24544799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51141084A Pending JPS5265693A (en) 1975-11-24 1976-11-24 Twin waveguide diode laser

Country Status (7)

Country Link
US (1) US4045749A (ja)
JP (1) JPS5265693A (ja)
CA (1) CA1068807A (ja)
DE (1) DE2653382A1 (ja)
FR (1) FR2332632A1 (ja)
GB (1) GB1555350A (ja)
NL (1) NL7613097A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151483A (ja) * 1983-02-18 1984-08-29 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS62281384A (ja) * 1986-05-29 1987-12-07 Oki Electric Ind Co Ltd 半導体レ−ザ素子およびその製造方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178604A (en) * 1973-10-05 1979-12-11 Hitachi, Ltd. Semiconductor laser device
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
US4323911A (en) * 1978-12-14 1982-04-06 Bell Telephone Laboratories, Incorporated Demultiplexing photodetectors
US4218143A (en) * 1979-01-22 1980-08-19 The United States Of America As Represented By The Secretary Of The Navy Lattice matching measurement device
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4575851A (en) * 1981-12-07 1986-03-11 Nippon Electric Co., Ltd. Double channel planar buried heterostructure laser with periodic structure formed in guide layer
US4445219A (en) * 1981-12-18 1984-04-24 Riley Leon H Layered semiconductor laser
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4716570A (en) * 1985-01-10 1987-12-29 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
JPH0712100B2 (ja) * 1985-03-25 1995-02-08 株式会社日立製作所 半導体発光素子
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
JP2700312B2 (ja) * 1987-01-07 1998-01-21 シャープ株式会社 分布帰還型半導体レーザ装置
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
US4905056A (en) * 1988-09-30 1990-02-27 Berndt Dale F Superlattice precision voltage reference
DE69220303T2 (de) * 1991-07-24 1998-01-02 Sharp Kk Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung
US5418182A (en) * 1993-03-26 1995-05-23 Honeywell Inc. Method of fabricating diode lasers using ion beam deposition
IL108439A (en) * 1994-01-26 1998-08-16 Yeda Res & Dev Optically pumped laser apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329479B2 (ja) * 1973-10-05 1978-08-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151483A (ja) * 1983-02-18 1984-08-29 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS62281384A (ja) * 1986-05-29 1987-12-07 Oki Electric Ind Co Ltd 半導体レ−ザ素子およびその製造方法

Also Published As

Publication number Publication date
CA1068807A (en) 1979-12-25
FR2332632A1 (fr) 1977-06-17
US4045749A (en) 1977-08-30
GB1555350A (en) 1979-11-07
NL7613097A (nl) 1977-05-26
DE2653382A1 (de) 1977-06-23

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