FR2332632A1 - Laser a diode a deux guides d'onde et a reaction distribuee - Google Patents

Laser a diode a deux guides d'onde et a reaction distribuee

Info

Publication number
FR2332632A1
FR2332632A1 FR7635232A FR7635232A FR2332632A1 FR 2332632 A1 FR2332632 A1 FR 2332632A1 FR 7635232 A FR7635232 A FR 7635232A FR 7635232 A FR7635232 A FR 7635232A FR 2332632 A1 FR2332632 A1 FR 2332632A1
Authority
FR
France
Prior art keywords
diode laser
wave guides
distributed reaction
distributed
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7635232A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of FR2332632A1 publication Critical patent/FR2332632A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7635232A 1975-11-24 1976-11-23 Laser a diode a deux guides d'onde et a reaction distribuee Pending FR2332632A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/634,682 US4045749A (en) 1975-11-24 1975-11-24 Corrugation coupled twin guide laser

Publications (1)

Publication Number Publication Date
FR2332632A1 true FR2332632A1 (fr) 1977-06-17

Family

ID=24544799

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635232A Pending FR2332632A1 (fr) 1975-11-24 1976-11-23 Laser a diode a deux guides d'onde et a reaction distribuee

Country Status (7)

Country Link
US (1) US4045749A (fr)
JP (1) JPS5265693A (fr)
CA (1) CA1068807A (fr)
DE (1) DE2653382A1 (fr)
FR (1) FR2332632A1 (fr)
GB (1) GB1555350A (fr)
NL (1) NL7613097A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178604A (en) * 1973-10-05 1979-12-11 Hitachi, Ltd. Semiconductor laser device
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
US4323911A (en) * 1978-12-14 1982-04-06 Bell Telephone Laboratories, Incorporated Demultiplexing photodetectors
US4218143A (en) * 1979-01-22 1980-08-19 The United States Of America As Represented By The Secretary Of The Navy Lattice matching measurement device
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4575851A (en) * 1981-12-07 1986-03-11 Nippon Electric Co., Ltd. Double channel planar buried heterostructure laser with periodic structure formed in guide layer
US4445219A (en) * 1981-12-18 1984-04-24 Riley Leon H Layered semiconductor laser
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPS59151483A (ja) * 1983-02-18 1984-08-29 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4716570A (en) * 1985-01-10 1987-12-29 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
JPH0712100B2 (ja) * 1985-03-25 1995-02-08 株式会社日立製作所 半導体発光素子
JPS62281384A (ja) * 1986-05-29 1987-12-07 Oki Electric Ind Co Ltd 半導体レ−ザ素子およびその製造方法
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
JP2700312B2 (ja) * 1987-01-07 1998-01-21 シャープ株式会社 分布帰還型半導体レーザ装置
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
US4905056A (en) * 1988-09-30 1990-02-27 Berndt Dale F Superlattice precision voltage reference
US5292685A (en) * 1991-07-24 1994-03-08 Sharp Kabushiki Kaisha Method for producing a distributed feedback semiconductor laser device
US5418182A (en) * 1993-03-26 1995-05-23 Honeywell Inc. Method of fabricating diode lasers using ion beam deposition
IL108439A (en) * 1994-01-26 1998-08-16 Yeda Res & Dev Optically pumped laser apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2447536A1 (de) * 1973-10-05 1975-04-17 Hitachi Ltd Halbleiter-laservorrichtung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2447536A1 (de) * 1973-10-05 1975-04-17 Hitachi Ltd Halbleiter-laservorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Also Published As

Publication number Publication date
US4045749A (en) 1977-08-30
GB1555350A (en) 1979-11-07
NL7613097A (nl) 1977-05-26
CA1068807A (fr) 1979-12-25
DE2653382A1 (de) 1977-06-23
JPS5265693A (en) 1977-05-31

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