JPS5260577A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5260577A
JPS5260577A JP13618475A JP13618475A JPS5260577A JP S5260577 A JPS5260577 A JP S5260577A JP 13618475 A JP13618475 A JP 13618475A JP 13618475 A JP13618475 A JP 13618475A JP S5260577 A JPS5260577 A JP S5260577A
Authority
JP
Japan
Prior art keywords
semiconductor device
junctions
gate turn
resistivity
incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13618475A
Other languages
English (en)
Japanese (ja)
Other versions
JPS574101B2 (nl
Inventor
Mamoru Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13618475A priority Critical patent/JPS5260577A/ja
Publication of JPS5260577A publication Critical patent/JPS5260577A/ja
Publication of JPS574101B2 publication Critical patent/JPS574101B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP13618475A 1975-11-14 1975-11-14 Semiconductor device Granted JPS5260577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13618475A JPS5260577A (en) 1975-11-14 1975-11-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13618475A JPS5260577A (en) 1975-11-14 1975-11-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5260577A true JPS5260577A (en) 1977-05-19
JPS574101B2 JPS574101B2 (nl) 1982-01-25

Family

ID=15169295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13618475A Granted JPS5260577A (en) 1975-11-14 1975-11-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5260577A (nl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129004U (ja) * 1984-02-08 1985-08-29 スタンレー電気株式会社 ヘツドランプの光軸調整装置

Also Published As

Publication number Publication date
JPS574101B2 (nl) 1982-01-25

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