JPS5249779A - Gate turn-off thyristor - Google Patents
Gate turn-off thyristorInfo
- Publication number
- JPS5249779A JPS5249779A JP12541575A JP12541575A JPS5249779A JP S5249779 A JPS5249779 A JP S5249779A JP 12541575 A JP12541575 A JP 12541575A JP 12541575 A JP12541575 A JP 12541575A JP S5249779 A JPS5249779 A JP S5249779A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- thyristor
- gate turn
- current
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12541575A JPS5249779A (en) | 1975-10-20 | 1975-10-20 | Gate turn-off thyristor |
| US05/876,140 US4127863A (en) | 1975-10-01 | 1978-02-08 | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12541575A JPS5249779A (en) | 1975-10-20 | 1975-10-20 | Gate turn-off thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5249779A true JPS5249779A (en) | 1977-04-21 |
| JPS5632793B2 JPS5632793B2 (OSRAM) | 1981-07-30 |
Family
ID=14909529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12541575A Granted JPS5249779A (en) | 1975-10-01 | 1975-10-20 | Gate turn-off thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5249779A (OSRAM) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3474303A (en) * | 1965-09-07 | 1969-10-21 | Semikron G Fur Gleichrichtelba | Semiconductor element having separated cathode zones |
| JPS5040074A (OSRAM) * | 1973-08-15 | 1975-04-12 |
-
1975
- 1975-10-20 JP JP12541575A patent/JPS5249779A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3474303A (en) * | 1965-09-07 | 1969-10-21 | Semikron G Fur Gleichrichtelba | Semiconductor element having separated cathode zones |
| JPS5040074A (OSRAM) * | 1973-08-15 | 1975-04-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5632793B2 (OSRAM) | 1981-07-30 |
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