JPS5249779A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5249779A
JPS5249779A JP12541575A JP12541575A JPS5249779A JP S5249779 A JPS5249779 A JP S5249779A JP 12541575 A JP12541575 A JP 12541575A JP 12541575 A JP12541575 A JP 12541575A JP S5249779 A JPS5249779 A JP S5249779A
Authority
JP
Japan
Prior art keywords
cathode
thyristor
gate turn
current
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12541575A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5632793B2 (OSRAM
Inventor
Mamoru Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12541575A priority Critical patent/JPS5249779A/ja
Publication of JPS5249779A publication Critical patent/JPS5249779A/ja
Priority to US05/876,140 priority patent/US4127863A/en
Publication of JPS5632793B2 publication Critical patent/JPS5632793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/133Thyristors having built-in components the built-in components being capacitors or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP12541575A 1975-10-01 1975-10-20 Gate turn-off thyristor Granted JPS5249779A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12541575A JPS5249779A (en) 1975-10-20 1975-10-20 Gate turn-off thyristor
US05/876,140 US4127863A (en) 1975-10-01 1978-02-08 Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12541575A JPS5249779A (en) 1975-10-20 1975-10-20 Gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS5249779A true JPS5249779A (en) 1977-04-21
JPS5632793B2 JPS5632793B2 (OSRAM) 1981-07-30

Family

ID=14909529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12541575A Granted JPS5249779A (en) 1975-10-01 1975-10-20 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5249779A (OSRAM)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474303A (en) * 1965-09-07 1969-10-21 Semikron G Fur Gleichrichtelba Semiconductor element having separated cathode zones
JPS5040074A (OSRAM) * 1973-08-15 1975-04-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474303A (en) * 1965-09-07 1969-10-21 Semikron G Fur Gleichrichtelba Semiconductor element having separated cathode zones
JPS5040074A (OSRAM) * 1973-08-15 1975-04-12

Also Published As

Publication number Publication date
JPS5632793B2 (OSRAM) 1981-07-30

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