JPS5245286A - Manufcturing method of field effect transistor of silicon gate type - Google Patents

Manufcturing method of field effect transistor of silicon gate type

Info

Publication number
JPS5245286A
JPS5245286A JP51084997A JP8499776A JPS5245286A JP S5245286 A JPS5245286 A JP S5245286A JP 51084997 A JP51084997 A JP 51084997A JP 8499776 A JP8499776 A JP 8499776A JP S5245286 A JPS5245286 A JP S5245286A
Authority
JP
Japan
Prior art keywords
gate type
field effect
effect transistor
silicon gate
manufcturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51084997A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5227517B2 (enrdf_load_stackoverflow
Inventor
Norio Kobayashi
Taketoshi Kato
Teruo Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51084997A priority Critical patent/JPS5245286A/ja
Publication of JPS5245286A publication Critical patent/JPS5245286A/ja
Publication of JPS5227517B2 publication Critical patent/JPS5227517B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP51084997A 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type Granted JPS5245286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51084997A JPS5245286A (en) 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51084997A JPS5245286A (en) 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP46026671A Division JPS5147311B1 (enrdf_load_stackoverflow) 1971-04-26 1971-04-26

Publications (2)

Publication Number Publication Date
JPS5245286A true JPS5245286A (en) 1977-04-09
JPS5227517B2 JPS5227517B2 (enrdf_load_stackoverflow) 1977-07-20

Family

ID=13846260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51084997A Granted JPS5245286A (en) 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type

Country Status (1)

Country Link
JP (1) JPS5245286A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469615A (en) * 1977-11-12 1979-06-04 Mitsubishi Heavy Ind Ltd Inspection method for worked injection hole of injection nozzle

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014135A (enrdf_load_stackoverflow) * 1973-06-11 1975-02-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014135A (enrdf_load_stackoverflow) * 1973-06-11 1975-02-14

Also Published As

Publication number Publication date
JPS5227517B2 (enrdf_load_stackoverflow) 1977-07-20

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