JPS5242479A - Continuous fabrication of determineddform single crystals and apparatus therefor - Google Patents

Continuous fabrication of determineddform single crystals and apparatus therefor

Info

Publication number
JPS5242479A
JPS5242479A JP9407376A JP9407376A JPS5242479A JP S5242479 A JPS5242479 A JP S5242479A JP 9407376 A JP9407376 A JP 9407376A JP 9407376 A JP9407376 A JP 9407376A JP S5242479 A JPS5242479 A JP S5242479A
Authority
JP
Japan
Prior art keywords
determineddform
single crystals
apparatus therefor
continuous fabrication
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9407376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS546510B2 (OSRAM
Inventor
Rikaru Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pechiney SA
Original Assignee
Ugine Kuhlmann SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7524770A external-priority patent/FR2321326A1/fr
Priority claimed from FR7622863A external-priority patent/FR2359639A2/fr
Application filed by Ugine Kuhlmann SA filed Critical Ugine Kuhlmann SA
Publication of JPS5242479A publication Critical patent/JPS5242479A/ja
Publication of JPS546510B2 publication Critical patent/JPS546510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9407376A 1975-08-08 1976-08-09 Continuous fabrication of determineddform single crystals and apparatus therefor Granted JPS5242479A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7524770A FR2321326A1 (fr) 1975-08-08 1975-08-08 Procede de fabrication en continu de monocristaux preformes
FR7622863A FR2359639A2 (fr) 1976-07-27 1976-07-27 Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins

Publications (2)

Publication Number Publication Date
JPS5242479A true JPS5242479A (en) 1977-04-02
JPS546510B2 JPS546510B2 (OSRAM) 1979-03-29

Family

ID=26219025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9407376A Granted JPS5242479A (en) 1975-08-08 1976-08-09 Continuous fabrication of determineddform single crystals and apparatus therefor

Country Status (5)

Country Link
JP (1) JPS5242479A (OSRAM)
CH (1) CH612596A5 (OSRAM)
DE (1) DE2635373C2 (OSRAM)
GB (1) GB1546843A (OSRAM)
IT (1) IT1069679B (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010105876A (ja) * 2008-10-31 2010-05-13 Tdk Corp 単結晶引下げ装置
JP4738174B2 (ja) * 2003-07-17 2011-08-03 ステラケミファ株式会社 フッ化物結晶の製造方法
JP2021172575A (ja) * 2020-04-30 2021-11-01 Tdk株式会社 坩堝および結晶製造装置
JP2021172796A (ja) * 2020-04-30 2021-11-01 Tdk株式会社 単結晶蛍光体および結晶体の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528454A1 (fr) * 1982-06-11 1983-12-16 Criceram Creuset modifie pour la methode de cristallisation par goutte pendante
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
ES2105808T3 (es) * 1994-07-08 1997-10-16 Heraeus Electro Nite Int Dispositivo para la medicion de la tension superficial.
DE4423720C1 (de) * 1994-07-08 1996-02-01 Heraeus Electro Nite Int Vorrichtung zur Messung der Oberflächenspannung
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
CN119927187B (zh) * 2024-12-26 2025-09-26 北京航空航天大学杭州创新研究院 一种热电材料线材的批量制备装置和方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1044768B (de) * 1954-03-02 1958-11-27 Siemens Ag Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers
DE1204837B (de) * 1961-08-21 1965-11-11 Merck & Co Inc Verfahren zur kontinuierlichen Herstellung von Staeben aus thermoelektrischen Werkstoffen
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3801309A (en) * 1971-11-08 1974-04-02 Tyco Laboratories Inc Production of eutectic bodies by unidirectional solidification

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738174B2 (ja) * 2003-07-17 2011-08-03 ステラケミファ株式会社 フッ化物結晶の製造方法
JP2010105876A (ja) * 2008-10-31 2010-05-13 Tdk Corp 単結晶引下げ装置
JP2021172575A (ja) * 2020-04-30 2021-11-01 Tdk株式会社 坩堝および結晶製造装置
JP2021172796A (ja) * 2020-04-30 2021-11-01 Tdk株式会社 単結晶蛍光体および結晶体の製造方法

Also Published As

Publication number Publication date
DE2635373A1 (de) 1977-04-21
IT1069679B (it) 1985-03-25
JPS546510B2 (OSRAM) 1979-03-29
GB1546843A (en) 1979-05-31
DE2635373C2 (de) 1982-04-15
CH612596A5 (en) 1979-08-15

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