JPS5236981A - Process for production of semiconductor devices - Google Patents

Process for production of semiconductor devices

Info

Publication number
JPS5236981A
JPS5236981A JP11281075A JP11281075A JPS5236981A JP S5236981 A JPS5236981 A JP S5236981A JP 11281075 A JP11281075 A JP 11281075A JP 11281075 A JP11281075 A JP 11281075A JP S5236981 A JPS5236981 A JP S5236981A
Authority
JP
Japan
Prior art keywords
production
semiconductor devices
extremely thin
pehistaltic
pccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11281075A
Other languages
Japanese (ja)
Inventor
Osamu Otsuki
Hideo Sei
Kunihiro Tanigawa
Hiroshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11281075A priority Critical patent/JPS5236981A/en
Publication of JPS5236981A publication Critical patent/JPS5236981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To form an extremely thin insulation substrate and an extremely thin semiconductor layer suited for PCCD(Pehistaltic Charge Coupled Device).
JP11281075A 1975-09-18 1975-09-18 Process for production of semiconductor devices Pending JPS5236981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11281075A JPS5236981A (en) 1975-09-18 1975-09-18 Process for production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11281075A JPS5236981A (en) 1975-09-18 1975-09-18 Process for production of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5236981A true JPS5236981A (en) 1977-03-22

Family

ID=14596088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11281075A Pending JPS5236981A (en) 1975-09-18 1975-09-18 Process for production of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5236981A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06939A (en) * 1992-06-18 1994-01-11 Mitsumura Insatsu Kk Planographic flat-bed multicolor printing press

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06939A (en) * 1992-06-18 1994-01-11 Mitsumura Insatsu Kk Planographic flat-bed multicolor printing press

Similar Documents

Publication Publication Date Title
JPS51138174A (en) Method of producing selffarrangement cmos to bulk silicon and insulating substrate device
JPS5270780A (en) Manufacture of semiconductor device
JPS5321572A (en) Production of semiconductor device
JPS5324277A (en) Semiconductor devic e and its production
JPS5249772A (en) Process for production of semiconductor device
JPS5236981A (en) Process for production of semiconductor devices
JPS5283070A (en) Production of semiconductor device
JPS5242381A (en) Semiconductor storage device
JPS5240061A (en) Semiconductor device and process for production of same
JPS5261960A (en) Production of semiconductor device
JPS5249781A (en) Process for production of semiconductor device
JPS5228879A (en) Semiconductor device and method for its production
JPS522384A (en) Semiconductor device
JPS5245267A (en) Process for production of semiconductor device
JPS5232683A (en) Manufacturing process of semiconductor device
JPS5244579A (en) Process for production of mos type semiconductor device
JPS5214366A (en) Process for production of semiconductor device
JPS5258463A (en) Production of semiconductor device
JPS51148380A (en) Manufacturing method of electric field semiconductor device
JPS51123589A (en) Semi-conductor manufacturing method
JPS5263668A (en) Production of semiconductor
JPS5248978A (en) Process for production of semiconductor device
JPS5341173A (en) Manufacture of semiconductor device
JPS5248987A (en) Process for production of compound semiconductor device
JPS5272162A (en) Production of semiconductor device