JPS5235988A - Composite semiconductor device - Google Patents

Composite semiconductor device

Info

Publication number
JPS5235988A
JPS5235988A JP50111928A JP11192875A JPS5235988A JP S5235988 A JPS5235988 A JP S5235988A JP 50111928 A JP50111928 A JP 50111928A JP 11192875 A JP11192875 A JP 11192875A JP S5235988 A JPS5235988 A JP S5235988A
Authority
JP
Japan
Prior art keywords
semiconductor device
composite semiconductor
drain
source
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50111928A
Other languages
Japanese (ja)
Other versions
JPS5753986B2 (en
Inventor
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP50111928A priority Critical patent/JPS5235988A/en
Publication of JPS5235988A publication Critical patent/JPS5235988A/en
Publication of JPS5753986B2 publication Critical patent/JPS5753986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enable small size semiconductor memory unit by making composite semiconductor device by means of connecting a high resistance to MOS transistor having drain, source, and gate electrodes.
JP50111928A 1975-09-16 1975-09-16 Composite semiconductor device Granted JPS5235988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50111928A JPS5235988A (en) 1975-09-16 1975-09-16 Composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50111928A JPS5235988A (en) 1975-09-16 1975-09-16 Composite semiconductor device

Publications (2)

Publication Number Publication Date
JPS5235988A true JPS5235988A (en) 1977-03-18
JPS5753986B2 JPS5753986B2 (en) 1982-11-16

Family

ID=14573627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50111928A Granted JPS5235988A (en) 1975-09-16 1975-09-16 Composite semiconductor device

Country Status (1)

Country Link
JP (1) JPS5235988A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390453A (en) * 1965-09-24 1968-07-02 Itt Method of making a sandwich resistor
JPS49110570U (en) * 1973-01-19 1974-09-20

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390453A (en) * 1965-09-24 1968-07-02 Itt Method of making a sandwich resistor
JPS49110570U (en) * 1973-01-19 1974-09-20

Also Published As

Publication number Publication date
JPS5753986B2 (en) 1982-11-16

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS53108392A (en) Semiconductor device
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5235988A (en) Composite semiconductor device
JPS5214383A (en) Mis-type semiconductor device
JPS5275987A (en) Gate protecting device
JPS5263637A (en) Device for non-volatile semiconductor memory
JPS5389685A (en) Production of semiconductor memory element
JPS53143177A (en) Production of field effect transistor
JPS53112687A (en) Semiconductor device
JPS5215274A (en) Semiconductor device
JPS52149481A (en) Semiconductor integrated circuit device and its production
JPS5211776A (en) Method of manufacturing semiconductor device
JPS51111043A (en) Mis logical circuit
JPS51147972A (en) Insulated gate field effect semiconductor device
JPS5388581A (en) Complementary type field effect transistor
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS5268393A (en) Semiconductor device
JPS526036A (en) Semiconductor memory circuit
JPS52123179A (en) Mos type semiconductor device and its production
JPS5211883A (en) Semiconductor integrated circuit device
JPS5373962A (en) Logic circuit
JPS51147133A (en) Non-voratile insulation gate semiconductor memory
JPS51147226A (en) Semiconductor memory device