JPS5232679A - Semiconductor device and its manufacturing process - Google Patents
Semiconductor device and its manufacturing processInfo
- Publication number
- JPS5232679A JPS5232679A JP50109277A JP10927775A JPS5232679A JP S5232679 A JPS5232679 A JP S5232679A JP 50109277 A JP50109277 A JP 50109277A JP 10927775 A JP10927775 A JP 10927775A JP S5232679 A JPS5232679 A JP S5232679A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing process
- side walls
- diffusion layer
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: The diffusion layer is formed on the side walls of concavity made on the substrate surface. So that a high-efficiency lateral transistor can be obtained.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50109277A JPS5914899B2 (en) | 1975-09-09 | 1975-09-09 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50109277A JPS5914899B2 (en) | 1975-09-09 | 1975-09-09 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5232679A true JPS5232679A (en) | 1977-03-12 |
JPS5914899B2 JPS5914899B2 (en) | 1984-04-06 |
Family
ID=14506078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50109277A Expired JPS5914899B2 (en) | 1975-09-09 | 1975-09-09 | Semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5914899B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929006A (en) * | 1954-12-02 | 1960-03-15 | Siemens Ag | Junction transistor |
US3615939A (en) * | 1969-01-15 | 1971-10-26 | Sprague Electric Co | Method of making a lateral transistor |
-
1975
- 1975-09-09 JP JP50109277A patent/JPS5914899B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929006A (en) * | 1954-12-02 | 1960-03-15 | Siemens Ag | Junction transistor |
US3615939A (en) * | 1969-01-15 | 1971-10-26 | Sprague Electric Co | Method of making a lateral transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5914899B2 (en) | 1984-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5324277A (en) | Semiconductor devic e and its production | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS5232679A (en) | Semiconductor device and its manufacturing process | |
JPS5379378A (en) | Semoconductor davice and its production | |
JPS5261960A (en) | Production of semiconductor device | |
JPS51113461A (en) | A method for manufacturing semiconductor devices | |
JPS5299085A (en) | Production of semiconductor device | |
JPS5244169A (en) | Process for production of semiconductor device | |
JPS5243385A (en) | Process for production of semiconductor integrated circuit | |
JPS5227391A (en) | Contact forming method of semiconductor device | |
JPS5258463A (en) | Production of semiconductor device | |
JPS53112673A (en) | Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution | |
JPS5258363A (en) | Formation of semiconductor layer | |
JPS51112277A (en) | Semiconductor device and its production method | |
JPS5251872A (en) | Production of semiconductor device | |
JPS5317286A (en) | Production of semiconductor device | |
JPS5244163A (en) | Process for productin of semiconductor element | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS5287359A (en) | Production of semiconductor device | |
JPS5287373A (en) | Production of semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS53139476A (en) | Manufacture of semiconductor device | |
JPS5325350A (en) | Dicing method of semiconductor substrates | |
JPS53101977A (en) | Diffusion method of inpurity to semiconductor substrate | |
JPS5210676A (en) | Semiconductor device |