JPS5232679A - Semiconductor device and its manufacturing process - Google Patents

Semiconductor device and its manufacturing process

Info

Publication number
JPS5232679A
JPS5232679A JP50109277A JP10927775A JPS5232679A JP S5232679 A JPS5232679 A JP S5232679A JP 50109277 A JP50109277 A JP 50109277A JP 10927775 A JP10927775 A JP 10927775A JP S5232679 A JPS5232679 A JP S5232679A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing process
side walls
diffusion layer
substrate surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50109277A
Other languages
Japanese (ja)
Other versions
JPS5914899B2 (en
Inventor
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50109277A priority Critical patent/JPS5914899B2/en
Publication of JPS5232679A publication Critical patent/JPS5232679A/en
Publication of JPS5914899B2 publication Critical patent/JPS5914899B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: The diffusion layer is formed on the side walls of concavity made on the substrate surface. So that a high-efficiency lateral transistor can be obtained.
COPYRIGHT: (C)1977,JPO&Japio
JP50109277A 1975-09-09 1975-09-09 Semiconductor device and its manufacturing method Expired JPS5914899B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50109277A JPS5914899B2 (en) 1975-09-09 1975-09-09 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50109277A JPS5914899B2 (en) 1975-09-09 1975-09-09 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5232679A true JPS5232679A (en) 1977-03-12
JPS5914899B2 JPS5914899B2 (en) 1984-04-06

Family

ID=14506078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50109277A Expired JPS5914899B2 (en) 1975-09-09 1975-09-09 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5914899B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929006A (en) * 1954-12-02 1960-03-15 Siemens Ag Junction transistor
US3615939A (en) * 1969-01-15 1971-10-26 Sprague Electric Co Method of making a lateral transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929006A (en) * 1954-12-02 1960-03-15 Siemens Ag Junction transistor
US3615939A (en) * 1969-01-15 1971-10-26 Sprague Electric Co Method of making a lateral transistor

Also Published As

Publication number Publication date
JPS5914899B2 (en) 1984-04-06

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