JPS5219068A - Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as - Google Patents

Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as

Info

Publication number
JPS5219068A
JPS5219068A JP9518675A JP9518675A JPS5219068A JP S5219068 A JPS5219068 A JP S5219068A JP 9518675 A JP9518675 A JP 9518675A JP 9518675 A JP9518675 A JP 9518675A JP S5219068 A JPS5219068 A JP S5219068A
Authority
JP
Japan
Prior art keywords
layer
base
plate
epitaxial growth
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9518675A
Other languages
Japanese (ja)
Other versions
JPS5441390B2 (en
Inventor
Yoshiharu Horikoshi
Minzo Iwane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9518675A priority Critical patent/JPS5219068A/en
Publication of JPS5219068A publication Critical patent/JPS5219068A/en
Publication of JPS5441390B2 publication Critical patent/JPS5441390B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:In order to obtain a growing layer with good quality, through restraining the unnecessary evaporation of as from the growing layer, by means of liquid-phase growing of the layer with As, in the vapor pressure.
JP9518675A 1975-08-04 1975-08-04 Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as Granted JPS5219068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9518675A JPS5219068A (en) 1975-08-04 1975-08-04 Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9518675A JPS5219068A (en) 1975-08-04 1975-08-04 Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as

Publications (2)

Publication Number Publication Date
JPS5219068A true JPS5219068A (en) 1977-01-14
JPS5441390B2 JPS5441390B2 (en) 1979-12-07

Family

ID=14130710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9518675A Granted JPS5219068A (en) 1975-08-04 1975-08-04 Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as

Country Status (1)

Country Link
JP (1) JPS5219068A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837396A (en) * 1971-09-16 1973-06-01
JPS4851897A (en) * 1971-11-02 1973-07-20
JPS4898774A (en) * 1972-03-27 1973-12-14

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837396A (en) * 1971-09-16 1973-06-01
JPS4851897A (en) * 1971-11-02 1973-07-20
JPS4898774A (en) * 1972-03-27 1973-12-14

Also Published As

Publication number Publication date
JPS5441390B2 (en) 1979-12-07

Similar Documents

Publication Publication Date Title
JPS5219068A (en) Method with which layer with as is formed though liquid-phase epitaxial growth on base-plate with as
JPS5260570A (en) Vapor phase growing device
JPS538374A (en) Growing method for single crystal of semiconductor
JPS534778A (en) Crystal growth method with molecular beam
JPS5243362A (en) Liquid growth method
JPS51139774A (en) Liquid phase growing device
JPS524782A (en) Liquid phase epitaxial growth method
ES462352A1 (en) Process for the evaporation of cyclohexanone oxime
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5244562A (en) Epitaxial growth method
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5245598A (en) Producing method of active carbon from coal
JPS52155189A (en) Multiple layer crystal growth
JPS5277897A (en) Production of gallium phosphide crystal
JPS5232669A (en) Liquid-phase epitaxial growth method
JPS5246761A (en) Crystal growth method
JPS51140561A (en) Liquid phase epitaxial growing method
JPS537171A (en) Vapor phase growth apparatus
JPS5248466A (en) Method for vapor growth of semiconductor crystal
JPS5272569A (en) Epitaxial growth device
JPS5262121A (en) Process for improving toughness of boron steel
JPS5286775A (en) Bebeling method for semiconductor substrate
JPS5235168A (en) Water making apparatus
JPS51129172A (en) Method of liquid phase epitaxial growth