JPS52152170A - Selective removal method of silicon oxide film - Google Patents
Selective removal method of silicon oxide filmInfo
- Publication number
- JPS52152170A JPS52152170A JP6880576A JP6880576A JPS52152170A JP S52152170 A JPS52152170 A JP S52152170A JP 6880576 A JP6880576 A JP 6880576A JP 6880576 A JP6880576 A JP 6880576A JP S52152170 A JPS52152170 A JP S52152170A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- removal method
- selective removal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To prevent the production of pinholes by selectively removing SiO2 after laminating a film such as Al film, for which etching solution differs from that for SiO2, on a SiO2 film in a gas atmosphere under a reduced pressure.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6880576A JPS52152170A (en) | 1976-06-14 | 1976-06-14 | Selective removal method of silicon oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6880576A JPS52152170A (en) | 1976-06-14 | 1976-06-14 | Selective removal method of silicon oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52152170A true JPS52152170A (en) | 1977-12-17 |
Family
ID=13384289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6880576A Pending JPS52152170A (en) | 1976-06-14 | 1976-06-14 | Selective removal method of silicon oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52152170A (en) |
-
1976
- 1976-06-14 JP JP6880576A patent/JPS52152170A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52125269A (en) | Removing device for projecting defects from wafer | |
JPS52152170A (en) | Selective removal method of silicon oxide film | |
JPS523390A (en) | Manufacturing method of semiconductor device | |
JPS5321574A (en) | Contact and separation method of photo mask | |
JPS51150986A (en) | Fabrication method of semiconductor device | |
JPS52127007A (en) | Voice recognition method | |
JPS53102676A (en) | Preventing method for lamination fault | |
JPS5359368A (en) | Plasma etching | |
JPS5373075A (en) | Treatment method for wafer surface | |
JPS5315764A (en) | Production of semiconductor device | |
JPS5327368A (en) | Selective etching method | |
JPS5321573A (en) | Etching method | |
JPS53108373A (en) | Manufacture for semiconductor device | |
JPS52146565A (en) | Production of semiconductor device | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS5211773A (en) | Method of manufacturing semiconductor device | |
JPS547882A (en) | Manufacture for semiconductor device | |
JPS5424580A (en) | Etching method | |
JPS5376754A (en) | Resist removing method | |
JPS5269649A (en) | Semiconductor distortion element | |
JPS51140484A (en) | Method of etching wafer | |
JPS5348667A (en) | Evaluation method of silicon single crystal wafer | |
JPS51138385A (en) | Method for liquid phase epitaxial growth | |
JPS5255865A (en) | Gas etching method of stain film | |
JPS5276872A (en) | Cutting method of semiconductor wafer |