JPS52137280A - Contacting structure on semiconductor array - Google Patents
Contacting structure on semiconductor arrayInfo
- Publication number
- JPS52137280A JPS52137280A JP5419777A JP5419777A JPS52137280A JP S52137280 A JPS52137280 A JP S52137280A JP 5419777 A JP5419777 A JP 5419777A JP 5419777 A JP5419777 A JP 5419777A JP S52137280 A JPS52137280 A JP S52137280A
- Authority
- JP
- Japan
- Prior art keywords
- contacting structure
- semiconductor array
- array
- semiconductor
- contacting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7614163A FR2351504A1 (fr) | 1976-05-11 | 1976-05-11 | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52137280A true JPS52137280A (en) | 1977-11-16 |
Family
ID=9172979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5419777A Pending JPS52137280A (en) | 1976-05-11 | 1977-05-11 | Contacting structure on semiconductor array |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS52137280A (ar) |
CA (1) | CA1089571A (ar) |
DE (1) | DE2721114A1 (ar) |
FR (1) | FR2351504A1 (ar) |
GB (1) | GB1545425A (ar) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591890A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Photodiode |
JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
CN116978999A (zh) * | 2023-09-22 | 2023-10-31 | 南昌凯捷半导体科技有限公司 | 一种电流限域Micro-LED芯片及其制作方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4182995A (en) * | 1978-03-16 | 1980-01-08 | Rca Corporation | Laser diode with thermal conducting, current confining film |
DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
DE3332398A1 (de) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Multimodenlaser |
-
1976
- 1976-05-11 FR FR7614163A patent/FR2351504A1/fr active Granted
-
1977
- 1977-05-09 GB GB19413/77A patent/GB1545425A/en not_active Expired
- 1977-05-10 CA CA278,081A patent/CA1089571A/en not_active Expired
- 1977-05-11 DE DE19772721114 patent/DE2721114A1/de not_active Withdrawn
- 1977-05-11 JP JP5419777A patent/JPS52137280A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591890A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Photodiode |
JPS6157718B2 (ar) * | 1978-12-28 | 1986-12-08 | Fujitsu Ltd | |
JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
CN116978999A (zh) * | 2023-09-22 | 2023-10-31 | 南昌凯捷半导体科技有限公司 | 一种电流限域Micro-LED芯片及其制作方法 |
CN116978999B (zh) * | 2023-09-22 | 2024-01-02 | 南昌凯捷半导体科技有限公司 | 一种电流限域Micro-LED芯片及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CA1089571A (en) | 1980-11-11 |
DE2721114A1 (de) | 1977-11-24 |
FR2351504B1 (ar) | 1980-04-18 |
FR2351504A1 (fr) | 1977-12-09 |
GB1545425A (en) | 1979-05-10 |
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