JPS52133759A - Production of semicondutor integrated circuit device - Google Patents

Production of semicondutor integrated circuit device

Info

Publication number
JPS52133759A
JPS52133759A JP5032876A JP5032876A JPS52133759A JP S52133759 A JPS52133759 A JP S52133759A JP 5032876 A JP5032876 A JP 5032876A JP 5032876 A JP5032876 A JP 5032876A JP S52133759 A JPS52133759 A JP S52133759A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
circuit device
semicondutor
semicondutor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5032876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5719867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Teruo Noguchi
Yasutaka Horiba
Teruichiro Tanaka
Takao Nakano
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5032876A priority Critical patent/JPS52133759A/ja
Publication of JPS52133759A publication Critical patent/JPS52133759A/ja
Publication of JPS5719867B2 publication Critical patent/JPS5719867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP5032876A 1976-04-30 1976-04-30 Production of semicondutor integrated circuit device Granted JPS52133759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5032876A JPS52133759A (en) 1976-04-30 1976-04-30 Production of semicondutor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5032876A JPS52133759A (en) 1976-04-30 1976-04-30 Production of semicondutor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS52133759A true JPS52133759A (en) 1977-11-09
JPS5719867B2 JPS5719867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-24

Family

ID=12855833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5032876A Granted JPS52133759A (en) 1976-04-30 1976-04-30 Production of semicondutor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS52133759A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPS5719867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-24

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