JPS52127065A - Gas phase growing method of semiconductor and its device - Google Patents

Gas phase growing method of semiconductor and its device

Info

Publication number
JPS52127065A
JPS52127065A JP4384076A JP4384076A JPS52127065A JP S52127065 A JPS52127065 A JP S52127065A JP 4384076 A JP4384076 A JP 4384076A JP 4384076 A JP4384076 A JP 4384076A JP S52127065 A JPS52127065 A JP S52127065A
Authority
JP
Japan
Prior art keywords
semiconductor
gas phase
growing method
wall
phase growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4384076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS557691B2 (enExample
Inventor
Kosuke Yasuno
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4384076A priority Critical patent/JPS52127065A/ja
Publication of JPS52127065A publication Critical patent/JPS52127065A/ja
Publication of JPS557691B2 publication Critical patent/JPS557691B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP4384076A 1976-04-16 1976-04-16 Gas phase growing method of semiconductor and its device Granted JPS52127065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4384076A JPS52127065A (en) 1976-04-16 1976-04-16 Gas phase growing method of semiconductor and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4384076A JPS52127065A (en) 1976-04-16 1976-04-16 Gas phase growing method of semiconductor and its device

Publications (2)

Publication Number Publication Date
JPS52127065A true JPS52127065A (en) 1977-10-25
JPS557691B2 JPS557691B2 (enExample) 1980-02-27

Family

ID=12674934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4384076A Granted JPS52127065A (en) 1976-04-16 1976-04-16 Gas phase growing method of semiconductor and its device

Country Status (1)

Country Link
JP (1) JPS52127065A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895818A (ja) * 1981-12-02 1983-06-07 Ushio Inc 被膜形成方法
JPS60182128A (ja) * 1984-02-29 1985-09-17 Hitachi Ltd 薄膜形成装置
JPS60253213A (ja) * 1984-05-30 1985-12-13 Toshiba Mach Co Ltd 気相成長装置およびその装置による気相成長方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239073U (enExample) * 1975-09-11 1977-03-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239073U (enExample) * 1975-09-11 1977-03-19

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895818A (ja) * 1981-12-02 1983-06-07 Ushio Inc 被膜形成方法
JPS60182128A (ja) * 1984-02-29 1985-09-17 Hitachi Ltd 薄膜形成装置
JPS60253213A (ja) * 1984-05-30 1985-12-13 Toshiba Mach Co Ltd 気相成長装置およびその装置による気相成長方法

Also Published As

Publication number Publication date
JPS557691B2 (enExample) 1980-02-27

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