JPS5211872A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5211872A JPS5211872A JP50087397A JP8739775A JPS5211872A JP S5211872 A JPS5211872 A JP S5211872A JP 50087397 A JP50087397 A JP 50087397A JP 8739775 A JP8739775 A JP 8739775A JP S5211872 A JPS5211872 A JP S5211872A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- parasiticly
- confining
- cmos
- shall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
GB2928276A GB1559582A (en) | 1975-07-18 | 1976-07-14 | Complementary mosfet device |
CH923676A CH611739A5 (en) | 1975-07-18 | 1976-07-19 | CMOS Semiconductor circuit |
DE19762632447 DE2632447A1 (de) | 1975-07-18 | 1976-07-19 | Cmos-halbleitervorrichtung |
FR7621993A FR2318503A1 (fr) | 1975-07-18 | 1976-07-19 | Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire |
US05/917,175 US4152717A (en) | 1975-07-18 | 1978-06-20 | Complementary MOSFET device |
MY8100316A MY8100316A (en) | 1975-07-18 | 1981-12-30 | A complementary mosfet device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50087397A JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5211872A true JPS5211872A (en) | 1977-01-29 |
JPS626347B2 JPS626347B2 (fr) | 1987-02-10 |
Family
ID=13913732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50087397A Granted JPS5211872A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5211872A (fr) |
CH (1) | CH611739A5 (fr) |
DE (1) | DE2632447A1 (fr) |
FR (1) | FR2318503A1 (fr) |
GB (1) | GB1559582A (fr) |
MY (1) | MY8100316A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210660A (ja) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | 半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL297002A (fr) * | 1962-08-23 | 1900-01-01 | ||
US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
-
1975
- 1975-07-18 JP JP50087397A patent/JPS5211872A/ja active Granted
-
1976
- 1976-07-14 GB GB2928276A patent/GB1559582A/en not_active Expired
- 1976-07-19 CH CH923676A patent/CH611739A5/xx not_active IP Right Cessation
- 1976-07-19 DE DE19762632447 patent/DE2632447A1/de not_active Ceased
- 1976-07-19 FR FR7621993A patent/FR2318503A1/fr active Granted
-
1981
- 1981-12-30 MY MY8100316A patent/MY8100316A/xx unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210660A (ja) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | 半導体装置 |
JPH0534832B2 (fr) * | 1982-06-01 | 1993-05-25 | Seiko Epson Corp |
Also Published As
Publication number | Publication date |
---|---|
MY8100316A (en) | 1981-12-31 |
FR2318503A1 (fr) | 1977-02-11 |
DE2632447A1 (de) | 1977-01-20 |
FR2318503B1 (fr) | 1980-05-16 |
JPS626347B2 (fr) | 1987-02-10 |
CH611739A5 (en) | 1979-06-15 |
GB1559582A (en) | 1980-01-23 |
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