MY8100316A - A complementary mosfet device - Google Patents

A complementary mosfet device

Info

Publication number
MY8100316A
MY8100316A MY8100316A MY8100316A MY8100316A MY 8100316 A MY8100316 A MY 8100316A MY 8100316 A MY8100316 A MY 8100316A MY 8100316 A MY8100316 A MY 8100316A MY 8100316 A MY8100316 A MY 8100316A
Authority
MY
Malaysia
Prior art keywords
mosfet device
complementary mosfet
complementary
mosfet
Prior art date
Application number
MY8100316A
Other languages
English (en)
Inventor
Kazuo Satou
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of MY8100316A publication Critical patent/MY8100316A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
MY8100316A 1975-07-18 1981-12-30 A complementary mosfet device MY8100316A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087397A JPS5211872A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
MY8100316A true MY8100316A (en) 1981-12-31

Family

ID=13913732

Family Applications (1)

Application Number Title Priority Date Filing Date
MY8100316A MY8100316A (en) 1975-07-18 1981-12-30 A complementary mosfet device

Country Status (6)

Country Link
JP (1) JPS5211872A (fr)
CH (1) CH611739A5 (fr)
DE (1) DE2632447A1 (fr)
FR (1) FR2318503A1 (fr)
GB (1) GB1559582A (fr)
MY (1) MY8100316A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58210660A (ja) * 1982-06-01 1983-12-07 Seiko Epson Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (fr) * 1962-08-23 1900-01-01
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Also Published As

Publication number Publication date
GB1559582A (en) 1980-01-23
DE2632447A1 (de) 1977-01-20
JPS626347B2 (fr) 1987-02-10
FR2318503B1 (fr) 1980-05-16
FR2318503A1 (fr) 1977-02-11
JPS5211872A (en) 1977-01-29
CH611739A5 (en) 1979-06-15

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