JPS52115674A - Production of semiconductor memory device - Google Patents

Production of semiconductor memory device

Info

Publication number
JPS52115674A
JPS52115674A JP3283376A JP3283376A JPS52115674A JP S52115674 A JPS52115674 A JP S52115674A JP 3283376 A JP3283376 A JP 3283376A JP 3283376 A JP3283376 A JP 3283376A JP S52115674 A JPS52115674 A JP S52115674A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
production
film
anodizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3283376A
Other languages
Japanese (ja)
Other versions
JPS5816340B2 (en
Inventor
Akisuke Mori
Kuniaki Makabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51032833A priority Critical patent/JPS5816340B2/en
Publication of JPS52115674A publication Critical patent/JPS52115674A/en
Publication of JPS5816340B2 publication Critical patent/JPS5816340B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To accurately regulate film thickness and resistance value and make possible accurate writing by forming fuses with a thin film that can be readily blown off and anodizing the surface of said film, in a programmable semiconductor memory device of a fuse blowing type.
JP51032833A 1976-03-24 1976-03-24 Method of manufacturing semiconductor memory device Expired JPS5816340B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51032833A JPS5816340B2 (en) 1976-03-24 1976-03-24 Method of manufacturing semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51032833A JPS5816340B2 (en) 1976-03-24 1976-03-24 Method of manufacturing semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS52115674A true JPS52115674A (en) 1977-09-28
JPS5816340B2 JPS5816340B2 (en) 1983-03-30

Family

ID=12369813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51032833A Expired JPS5816340B2 (en) 1976-03-24 1976-03-24 Method of manufacturing semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5816340B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0083211A2 (en) * 1981-12-28 1983-07-06 Fujitsu Limited Semiconductor device with fuse
JPS60135900U (en) * 1984-12-26 1985-09-09 セイコーエプソン株式会社 semiconductor storage device
KR100855832B1 (en) * 2002-07-18 2008-09-01 주식회사 하이닉스반도체 Repairing method of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199957U (en) * 1987-12-23 1989-07-05

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0083211A2 (en) * 1981-12-28 1983-07-06 Fujitsu Limited Semiconductor device with fuse
JPS60135900U (en) * 1984-12-26 1985-09-09 セイコーエプソン株式会社 semiconductor storage device
KR100855832B1 (en) * 2002-07-18 2008-09-01 주식회사 하이닉스반도체 Repairing method of semiconductor device

Also Published As

Publication number Publication date
JPS5816340B2 (en) 1983-03-30

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