JPS52109371A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS52109371A
JPS52109371A JP2515076A JP2515076A JPS52109371A JP S52109371 A JPS52109371 A JP S52109371A JP 2515076 A JP2515076 A JP 2515076A JP 2515076 A JP2515076 A JP 2515076A JP S52109371 A JPS52109371 A JP S52109371A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
film
nitride film
action
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2515076A
Other languages
Japanese (ja)
Other versions
JPS5649454B2 (en
Inventor
Yoichi Tamaoki
Seiichi Isomae
Masahiko Kogirima
Akira Shintani
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2515076A priority Critical patent/JPS52109371A/en
Priority to NLAANVRAGE7613799,A priority patent/NL171942C/en
Priority to US05/756,863 priority patent/US4126880A/en
Priority to DE2705902A priority patent/DE2705902C3/en
Publication of JPS52109371A publication Critical patent/JPS52109371A/en
Publication of JPS5649454B2 publication Critical patent/JPS5649454B2/ja
Granted legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To obtain the mask of the double-layer structure that suits for the use of the selective oxidation the selected diffusion and the selection etching; which are composed with the upper film of Si nitride film having great masking action and with the lower film of Ge.Si nitride film having the skew mitigative action.
COPYRIGHT: (C)1977,JPO&Japio
JP2515076A 1976-02-13 1976-03-10 Manufacture of semiconductor device Granted JPS52109371A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2515076A JPS52109371A (en) 1976-03-10 1976-03-10 Manufacture of semiconductor device
NLAANVRAGE7613799,A NL171942C (en) 1976-02-13 1976-12-10 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLICATING A SEMICON AND GERMANIUM NITRIDES ON A SEMICONDUCTOR BODY
US05/756,863 US4126880A (en) 1976-02-13 1977-01-04 Germanium-containing silicon nitride film
DE2705902A DE2705902C3 (en) 1976-02-13 1977-02-11 Germanium-containing silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2515076A JPS52109371A (en) 1976-03-10 1976-03-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52109371A true JPS52109371A (en) 1977-09-13
JPS5649454B2 JPS5649454B2 (en) 1981-11-21

Family

ID=12157962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2515076A Granted JPS52109371A (en) 1976-02-13 1976-03-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52109371A (en)

Also Published As

Publication number Publication date
JPS5649454B2 (en) 1981-11-21

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