JPS52102670A - Formation of extruding electrode in semiconductor device - Google Patents

Formation of extruding electrode in semiconductor device

Info

Publication number
JPS52102670A
JPS52102670A JP1897676A JP1897676A JPS52102670A JP S52102670 A JPS52102670 A JP S52102670A JP 1897676 A JP1897676 A JP 1897676A JP 1897676 A JP1897676 A JP 1897676A JP S52102670 A JPS52102670 A JP S52102670A
Authority
JP
Japan
Prior art keywords
formation
semiconductor device
electrode
extruding electrode
extruding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1897676A
Other languages
Japanese (ja)
Inventor
Toru Kawanobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1897676A priority Critical patent/JPS52102670A/en
Publication of JPS52102670A publication Critical patent/JPS52102670A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

PURPOSE: To obtain an extruding electrode of solder easily and at a short process time, by coating a Cu layer chemically plated on a portion left for applying an electrode of base metal layer and forming a layer chemically plated.
COPYRIGHT: (C)1977,JPO&Japio
JP1897676A 1976-02-25 1976-02-25 Formation of extruding electrode in semiconductor device Pending JPS52102670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1897676A JPS52102670A (en) 1976-02-25 1976-02-25 Formation of extruding electrode in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1897676A JPS52102670A (en) 1976-02-25 1976-02-25 Formation of extruding electrode in semiconductor device

Publications (1)

Publication Number Publication Date
JPS52102670A true JPS52102670A (en) 1977-08-29

Family

ID=11986651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1897676A Pending JPS52102670A (en) 1976-02-25 1976-02-25 Formation of extruding electrode in semiconductor device

Country Status (1)

Country Link
JP (1) JPS52102670A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932154A (en) * 1982-08-18 1984-02-21 Seiko Instr & Electronics Ltd Forming method for solder bump

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932154A (en) * 1982-08-18 1984-02-21 Seiko Instr & Electronics Ltd Forming method for solder bump
JPH0226780B2 (en) * 1982-08-18 1990-06-12 Seiko Instr & Electronics

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