JPS5165532A - - Google Patents

Info

Publication number
JPS5165532A
JPS5165532A JP12725575A JP12725575A JPS5165532A JP S5165532 A JPS5165532 A JP S5165532A JP 12725575 A JP12725575 A JP 12725575A JP 12725575 A JP12725575 A JP 12725575A JP S5165532 A JPS5165532 A JP S5165532A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12725575A
Other versions
JPS5857839B2 (ja
Inventor
Shutain Karurururitsuhi
Horuningaa Karuruhainritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5165532A publication Critical patent/JPS5165532A/ja
Publication of JPS5857839B2 publication Critical patent/JPS5857839B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0018—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
JP50127255A 1974-10-22 1975-10-22 フキハツセイキオクキニタイスル ダイナミツクタントランジスタキオクソシ Expired JPS5857839B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742450116 DE2450116C2 (de) 1974-10-22 1974-10-22 Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb

Publications (2)

Publication Number Publication Date
JPS5165532A true JPS5165532A (ja) 1976-06-07
JPS5857839B2 JPS5857839B2 (ja) 1983-12-22

Family

ID=5928844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50127255A Expired JPS5857839B2 (ja) 1974-10-22 1975-10-22 フキハツセイキオクキニタイスル ダイナミツクタントランジスタキオクソシ

Country Status (6)

Country Link
US (1) US4055837A (ja)
JP (1) JPS5857839B2 (ja)
DE (1) DE2450116C2 (ja)
FR (1) FR2289027A1 (ja)
GB (1) GB1517206A (ja)
NL (1) NL7512337A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56148793A (en) * 1980-03-19 1981-11-18 Plessey Overseas Semiconductor memory cell
JPS59221893A (ja) * 1983-05-31 1984-12-13 Toshiba Corp 不揮発性半導体メモリ
JPS62266793A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH08315576A (ja) * 1995-04-27 1996-11-29 Lg Semicon Co Ltd ビットライン選択回路

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4149270A (en) * 1977-09-26 1979-04-10 Westinghouse Electric Corp. Variable threshold device memory circuit having automatic refresh feature
JPS5457875A (en) * 1977-10-17 1979-05-10 Hitachi Ltd Semiconductor nonvolatile memory device
JPS56110252A (en) * 1980-02-05 1981-09-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
US4363110A (en) * 1980-12-22 1982-12-07 International Business Machines Corp. Non-volatile dynamic RAM cell
US4375085A (en) * 1981-01-02 1983-02-22 International Business Machines Corporation Dense electrically alterable read only memory
US4380803A (en) * 1981-02-10 1983-04-19 Burroughs Corporation Read-only/read-write memory
US4434478A (en) * 1981-11-27 1984-02-28 International Business Machines Corporation Programming floating gate devices
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
US4432072A (en) * 1981-12-31 1984-02-14 International Business Machines Corporation Non-volatile dynamic RAM cell
US4449205A (en) * 1982-02-19 1984-05-15 International Business Machines Corp. Dynamic RAM with non-volatile back-up storage and method of operation thereof
JP2731701B2 (ja) * 1993-06-30 1998-03-25 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｄｒａｍセル
US5640030A (en) * 1995-05-05 1997-06-17 International Business Machines Corporation Double dense ferroelectric capacitor cell memory
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM
US6849909B1 (en) * 2000-09-28 2005-02-01 Intel Corporation Method and apparatus for weak inversion mode MOS decoupling capacitor
US6829166B2 (en) 2002-09-13 2004-12-07 Ememory Technology Inc. Method for controlling a non-volatile dynamic random access memory
EP1437742A1 (en) * 2003-01-09 2004-07-14 eMemory Technology Inc. Method for controlling a non-volatile dynamic random access memory
KR100719178B1 (ko) * 2003-08-29 2007-05-17 주식회사 하이닉스반도체 비휘발성 디램의 구동방법
US9214465B2 (en) 2012-07-24 2015-12-15 Flashsilicon Incorporation Structures and operational methods of non-volatile dynamic random access memory devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855581A (en) * 1971-12-30 1974-12-17 Mos Technology Inc Semiconductor device and circuits

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56148793A (en) * 1980-03-19 1981-11-18 Plessey Overseas Semiconductor memory cell
JPS59221893A (ja) * 1983-05-31 1984-12-13 Toshiba Corp 不揮発性半導体メモリ
JPS6322398B2 (ja) * 1983-05-31 1988-05-11 Tokyo Shibaura Electric Co
JPS62266793A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0568799B2 (ja) * 1986-05-13 1993-09-29 Mitsubishi Electric Corp
JPH08315576A (ja) * 1995-04-27 1996-11-29 Lg Semicon Co Ltd ビットライン選択回路

Also Published As

Publication number Publication date
NL7512337A (nl) 1976-04-26
DE2450116B1 (de) 1976-01-22
FR2289027B1 (ja) 1978-04-07
JPS5857839B2 (ja) 1983-12-22
DE2450116C2 (de) 1976-09-16
US4055837A (en) 1977-10-25
FR2289027A1 (fr) 1976-05-21
GB1517206A (en) 1978-07-12

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