JPS51148378A - Manufacturing method of insulation gate type electric field effect tra nsistor - Google Patents
Manufacturing method of insulation gate type electric field effect tra nsistorInfo
- Publication number
- JPS51148378A JPS51148378A JP7257975A JP7257975A JPS51148378A JP S51148378 A JPS51148378 A JP S51148378A JP 7257975 A JP7257975 A JP 7257975A JP 7257975 A JP7257975 A JP 7257975A JP S51148378 A JPS51148378 A JP S51148378A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- electric field
- field effect
- type electric
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7257975A JPS596073B2 (ja) | 1975-06-14 | 1975-06-14 | ゼツエンゲ−トガタデンカイコウカトランジスタノ セイゾウホウホウ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7257975A JPS596073B2 (ja) | 1975-06-14 | 1975-06-14 | ゼツエンゲ−トガタデンカイコウカトランジスタノ セイゾウホウホウ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51148378A true JPS51148378A (en) | 1976-12-20 |
JPS596073B2 JPS596073B2 (ja) | 1984-02-08 |
Family
ID=13493421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7257975A Expired JPS596073B2 (ja) | 1975-06-14 | 1975-06-14 | ゼツエンゲ−トガタデンカイコウカトランジスタノ セイゾウホウホウ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS596073B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54122092A (en) * | 1978-03-16 | 1979-09-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit |
JPS58127381A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体装置の製造方法 |
-
1975
- 1975-06-14 JP JP7257975A patent/JPS596073B2/ja not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54122092A (en) * | 1978-03-16 | 1979-09-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit |
JPS58127381A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH0547978B2 (ja) * | 1982-01-26 | 1993-07-20 | Seiko Epson Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS596073B2 (ja) | 1984-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52132684A (en) | Insulating gate type field effect transistor | |
JPS51150988A (en) | X-ray device | |
JPS5315081A (en) | Junction type field effect transistor and its production | |
JPS51148378A (en) | Manufacturing method of insulation gate type electric field effect tra nsistor | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS5412573A (en) | Junction type field effect transistor and production of the same | |
JPS5212500A (en) | Producing method of electrical insulation compound | |
JPS5337378A (en) | Manufacture ofr flat type electron tube | |
JPS5373382A (en) | Manufacturing method of highly-foamed plastic insulated electric wire | |
JPS5368986A (en) | Mos type transistor | |
JPS5277592A (en) | Production of semiconductor device | |
JPS52101486A (en) | Manufacturing process of terminal processed taped wires | |
JPS5242080A (en) | Micro channel type insulated gate field effect transistor and process for productin thereof | |
JPS51134885A (en) | Manufacturing method of electric cable | |
JPS5245180A (en) | Method of manufacture of electric bulb | |
JPS547881A (en) | Mos field effect transistor | |
JPS52122086A (en) | Insulated gate type field effect rransistor | |
JPS5256859A (en) | Production of semiconductor device | |
JPS5354979A (en) | Production of field effect transistor | |
JPS5239198A (en) | Manufacturing method of plug-in type insulating reinforcement for cabl e connection | |
JPS51150283A (en) | Semiconductor device | |
JPS51151064A (en) | Manufacturing method of a channel secondary electron multiplying face | |
JPS51113192A (en) | Bushing | |
JPS51147277A (en) | Field effect transistor | |
JPS5216198A (en) | Electrode for indication device |