JPS51151064A - Manufacturing method of a channel secondary electron multiplying face - Google Patents

Manufacturing method of a channel secondary electron multiplying face

Info

Publication number
JPS51151064A
JPS51151064A JP7608875A JP7608875A JPS51151064A JP S51151064 A JPS51151064 A JP S51151064A JP 7608875 A JP7608875 A JP 7608875A JP 7608875 A JP7608875 A JP 7608875A JP S51151064 A JPS51151064 A JP S51151064A
Authority
JP
Japan
Prior art keywords
face
secondary electron
manufacturing
electron multiplying
channel secondary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7608875A
Other languages
Japanese (ja)
Inventor
Kinichi Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7608875A priority Critical patent/JPS51151064A/en
Publication of JPS51151064A publication Critical patent/JPS51151064A/en
Pending legal-status Critical Current

Links

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

PURPOSE: To make as the secondary electron multilying face can be manufactured simply with the low cost, by the irradiation and the etching, containing the conductive material in the electronic wire hardening material.
COPYRIGHT: (C)1976,JPO&Japio
JP7608875A 1975-06-20 1975-06-20 Manufacturing method of a channel secondary electron multiplying face Pending JPS51151064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7608875A JPS51151064A (en) 1975-06-20 1975-06-20 Manufacturing method of a channel secondary electron multiplying face

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7608875A JPS51151064A (en) 1975-06-20 1975-06-20 Manufacturing method of a channel secondary electron multiplying face

Publications (1)

Publication Number Publication Date
JPS51151064A true JPS51151064A (en) 1976-12-25

Family

ID=13595066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7608875A Pending JPS51151064A (en) 1975-06-20 1975-06-20 Manufacturing method of a channel secondary electron multiplying face

Country Status (1)

Country Link
JP (1) JPS51151064A (en)

Similar Documents

Publication Publication Date Title
JPS5228887A (en) Semiconductive emitter device
JPS521497A (en) Forming method of transparent conductive indium oxide film
JPS51112187A (en) Processing method of semiconductor equipment
JPS51151064A (en) Manufacturing method of a channel secondary electron multiplying face
JPS51151063A (en) Manufacturing method of a channel secondary electron muliplying face
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS5279667A (en) Semiconductor device
JPS51132973A (en) Semiconductor device
JPS53123673A (en) Manufacture of semiconductor device
JPS51118391A (en) Manufacturing process for semiconducter unit
JPS51147184A (en) Method of mawufacturing of mosic circuit device
JPS5341173A (en) Manufacture of semiconductor device
JPS5240977A (en) Process for production of semiconductor device
JPS52106681A (en) Etching method
JPS5329662A (en) Production of semiconductor device
JPS5422776A (en) Manufacture of semiconductor device
JPS51141583A (en) Method for producing an electrode for use semiconductor units
JPS5227281A (en) Semiconductor manufacturing process
JPS5231691A (en) Semiconductor luminous device
JPS5442987A (en) Manufacture of semiconductor device
JPS5270754A (en) Impurity doping method
JPS51148378A (en) Manufacturing method of insulation gate type electric field effect tra nsistor
JPS5263067A (en) Production of semiconductor device
JPS51124363A (en) Method of manufacturing vacuum-electric equipment
JPS51148356A (en) Manufacturing method of semiconductor device