JPS51139279A - Method of manufacturing semi-conductor element - Google Patents

Method of manufacturing semi-conductor element

Info

Publication number
JPS51139279A
JPS51139279A JP6330975A JP6330975A JPS51139279A JP S51139279 A JPS51139279 A JP S51139279A JP 6330975 A JP6330975 A JP 6330975A JP 6330975 A JP6330975 A JP 6330975A JP S51139279 A JPS51139279 A JP S51139279A
Authority
JP
Japan
Prior art keywords
oxide film
conductor element
type
manufacturing semi
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6330975A
Other languages
Japanese (ja)
Inventor
Masafumi Miyagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6330975A priority Critical patent/JPS51139279A/en
Publication of JPS51139279A publication Critical patent/JPS51139279A/en
Pending legal-status Critical Current

Links

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  • Thyristors (AREA)

Abstract

PURPOSE: To reduce the process of manufacture of a thyristor by effecting the diffusion by a sealed tube method with the opposite sides of an n-type substrate formed with p-type layers with an oxide film and with GaP used as the source of diffusion, thereby forming an n-type region from a window formed in the oxide film and simultaneously forming p-type regions through the oxide film.
COPYRIGHT: (C)1976,JPO&Japio
JP6330975A 1975-05-27 1975-05-27 Method of manufacturing semi-conductor element Pending JPS51139279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6330975A JPS51139279A (en) 1975-05-27 1975-05-27 Method of manufacturing semi-conductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6330975A JPS51139279A (en) 1975-05-27 1975-05-27 Method of manufacturing semi-conductor element

Publications (1)

Publication Number Publication Date
JPS51139279A true JPS51139279A (en) 1976-12-01

Family

ID=13225544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6330975A Pending JPS51139279A (en) 1975-05-27 1975-05-27 Method of manufacturing semi-conductor element

Country Status (1)

Country Link
JP (1) JPS51139279A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290174A (en) * 1986-06-07 1987-12-17 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49126277A (en) * 1973-04-04 1974-12-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49126277A (en) * 1973-04-04 1974-12-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290174A (en) * 1986-06-07 1987-12-17 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor device

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