JPS51137387A - Manufacturing method for a semiconductor - Google Patents

Manufacturing method for a semiconductor

Info

Publication number
JPS51137387A
JPS51137387A JP6096775A JP6096775A JPS51137387A JP S51137387 A JPS51137387 A JP S51137387A JP 6096775 A JP6096775 A JP 6096775A JP 6096775 A JP6096775 A JP 6096775A JP S51137387 A JPS51137387 A JP S51137387A
Authority
JP
Japan
Prior art keywords
semiconductor
junction
manufacturing
layor
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6096775A
Other languages
Japanese (ja)
Inventor
Hisashi Sakamoto
Koichi Moriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6096775A priority Critical patent/JPS51137387A/en
Publication of JPS51137387A publication Critical patent/JPS51137387A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363Thyristors
    • H01L29/66393Lateral or planar thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:A method of forming simply the groove with a good shape arranging passive state layor covering PN junction on a semiconductor wafer where the voltage blocking PN junction is exposed to one main surface.
JP6096775A 1975-05-23 1975-05-23 Manufacturing method for a semiconductor Pending JPS51137387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6096775A JPS51137387A (en) 1975-05-23 1975-05-23 Manufacturing method for a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6096775A JPS51137387A (en) 1975-05-23 1975-05-23 Manufacturing method for a semiconductor

Publications (1)

Publication Number Publication Date
JPS51137387A true JPS51137387A (en) 1976-11-27

Family

ID=13157682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6096775A Pending JPS51137387A (en) 1975-05-23 1975-05-23 Manufacturing method for a semiconductor

Country Status (1)

Country Link
JP (1) JPS51137387A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5257236U (en) * 1976-10-13 1977-04-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498181A (en) * 1972-05-10 1974-01-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498181A (en) * 1972-05-10 1974-01-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5257236U (en) * 1976-10-13 1977-04-25

Similar Documents

Publication Publication Date Title
GB1542572A (en) Method of etching a semiconductor substrate
CA1011005A (en) Method for fabricating mos devices with a multiplicity of thresholds on a single semiconductor substrate
JPS5324277A (en) Semiconductor devic e and its production
JPS51137387A (en) Manufacturing method for a semiconductor
JPS5417682A (en) Semiconductor and its manufacture
SE7604827L (en) PROCEDURE FOR MANUFACTURING A SEMICONDUCTOR AND SEMICONDUCTORS MANUFACTURING ACCORDING TO THIS PROCEDURE
JPS5317279A (en) Production of semiconductor device
JPS52119084A (en) Manufacture of semiconductor integrated circuit
JPS5348457A (en) Production of semiconductor element
JPS548982A (en) Semiconductor device
JPS5263080A (en) Production of semiconductor integrated circuit device
JPS5377474A (en) Production of semiconductor device
JPS5353988A (en) Semiconductor integrated circuit
JPS5431289A (en) Semiconductor device
JPS5350985A (en) Semiconductor memory device
JPS5230173A (en) Manufacturing method of semiconductor element
JPS5387183A (en) Planar type semiconductor device
JPS5249780A (en) Semiconductor integrated circuit
JPS5563879A (en) Semiconductor device
JPS5365086A (en) Production of semiconductor device
JPS5252592A (en) Semiconductor light receiving element
IT1068248B (en) PROCEDURE FOR THE PRODUCTION OF PASSIVATED SEMICONDUCTOR DEVICES WITH INTEGRATED HEAT DISSIPATOR
JPS5315756A (en) Production of semiconductor device
JPS5316585A (en) Semiconductor device
JPS5210081A (en) Method for manufacturing semiconductor device