JPS51135481A - Semiconductor integrated circuit and its process - Google Patents

Semiconductor integrated circuit and its process

Info

Publication number
JPS51135481A
JPS51135481A JP50060722A JP6072275A JPS51135481A JP S51135481 A JPS51135481 A JP S51135481A JP 50060722 A JP50060722 A JP 50060722A JP 6072275 A JP6072275 A JP 6072275A JP S51135481 A JPS51135481 A JP S51135481A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
effect
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50060722A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5548702B2 (en:Method
Inventor
Hiroshi Koide
Yukio Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50060722A priority Critical patent/JPS51135481A/ja
Publication of JPS51135481A publication Critical patent/JPS51135481A/ja
Publication of JPS5548702B2 publication Critical patent/JPS5548702B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP50060722A 1975-05-20 1975-05-20 Semiconductor integrated circuit and its process Granted JPS51135481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50060722A JPS51135481A (en) 1975-05-20 1975-05-20 Semiconductor integrated circuit and its process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50060722A JPS51135481A (en) 1975-05-20 1975-05-20 Semiconductor integrated circuit and its process

Publications (2)

Publication Number Publication Date
JPS51135481A true JPS51135481A (en) 1976-11-24
JPS5548702B2 JPS5548702B2 (en:Method) 1980-12-08

Family

ID=13150443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50060722A Granted JPS51135481A (en) 1975-05-20 1975-05-20 Semiconductor integrated circuit and its process

Country Status (1)

Country Link
JP (1) JPS51135481A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851817A (ja) * 1981-09-24 1983-03-26 株式会社クボタ 結束装置付きコンバイン

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49124990A (en:Method) * 1973-04-02 1974-11-29

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49124990A (en:Method) * 1973-04-02 1974-11-29

Also Published As

Publication number Publication date
JPS5548702B2 (en:Method) 1980-12-08

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