JPS51114077A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51114077A
JPS51114077A JP50039337A JP3933775A JPS51114077A JP S51114077 A JPS51114077 A JP S51114077A JP 50039337 A JP50039337 A JP 50039337A JP 3933775 A JP3933775 A JP 3933775A JP S51114077 A JPS51114077 A JP S51114077A
Authority
JP
Japan
Prior art keywords
semiconductor device
increasing
negligeable
sos
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50039337A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5723428B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kaoru Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50039337A priority Critical patent/JPS51114077A/ja
Publication of JPS51114077A publication Critical patent/JPS51114077A/ja
Publication of JPS5723428B2 publication Critical patent/JPS5723428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
JP50039337A 1975-03-31 1975-03-31 Semiconductor device Granted JPS51114077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50039337A JPS51114077A (en) 1975-03-31 1975-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50039337A JPS51114077A (en) 1975-03-31 1975-03-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS51114077A true JPS51114077A (en) 1976-10-07
JPS5723428B2 JPS5723428B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-05-18

Family

ID=12550266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50039337A Granted JPS51114077A (en) 1975-03-31 1975-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51114077A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140270A (en) * 1979-04-19 1980-11-01 Agency Of Ind Science & Technol Insulated gate transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140270A (en) * 1979-04-19 1980-11-01 Agency Of Ind Science & Technol Insulated gate transistor

Also Published As

Publication number Publication date
JPS5723428B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-05-18

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