JPS51107779A - - Google Patents
Info
- Publication number
- JPS51107779A JPS51107779A JP51016882A JP1688276A JPS51107779A JP S51107779 A JPS51107779 A JP S51107779A JP 51016882 A JP51016882 A JP 51016882A JP 1688276 A JP1688276 A JP 1688276A JP S51107779 A JPS51107779 A JP S51107779A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2507038A DE2507038C3 (de) | 1975-02-19 | 1975-02-19 | Inverser Planartransistor und Verfahren zu seiner Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51107779A true JPS51107779A (fi) | 1976-09-24 |
Family
ID=5939232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51016882A Pending JPS51107779A (fi) | 1975-02-19 | 1976-02-18 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS51107779A (fi) |
DE (1) | DE2507038C3 (fi) |
FR (1) | FR2301925A1 (fi) |
GB (1) | GB1494149A (fi) |
IT (1) | IT1055197B (fi) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5385182A (en) * | 1977-01-05 | 1978-07-27 | Hitachi Ltd | Iil type semiconductor device |
JPS55111159A (en) * | 1979-02-20 | 1980-08-27 | Fuji Electric Co Ltd | Semiconductor integrated circuit |
JPS564275A (en) * | 1979-06-25 | 1981-01-17 | Fujitsu Ltd | Semiconductor device |
JPS56107572A (en) * | 1981-01-09 | 1981-08-26 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS59158554A (ja) * | 1983-02-27 | 1984-09-08 | Rohm Co Ltd | トランジスタ |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2532608C2 (de) * | 1975-07-22 | 1982-09-02 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung |
DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926752A (fi) * | 1972-07-06 | 1974-03-09 | ||
JPS517885A (fi) * | 1974-07-09 | 1976-01-22 | Tokyo Shibaura Electric Co | |
JPS5171077A (fi) * | 1974-12-16 | 1976-06-19 | Mitsubishi Electric Corp |
-
1975
- 1975-02-19 DE DE2507038A patent/DE2507038C3/de not_active Expired
- 1975-12-05 GB GB49938/75A patent/GB1494149A/en not_active Expired
-
1976
- 1976-02-10 FR FR7603630A patent/FR2301925A1/fr active Granted
- 1976-02-11 IT IT20065/76A patent/IT1055197B/it active
- 1976-02-18 JP JP51016882A patent/JPS51107779A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926752A (fi) * | 1972-07-06 | 1974-03-09 | ||
JPS517885A (fi) * | 1974-07-09 | 1976-01-22 | Tokyo Shibaura Electric Co | |
JPS5171077A (fi) * | 1974-12-16 | 1976-06-19 | Mitsubishi Electric Corp |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5385182A (en) * | 1977-01-05 | 1978-07-27 | Hitachi Ltd | Iil type semiconductor device |
JPS55111159A (en) * | 1979-02-20 | 1980-08-27 | Fuji Electric Co Ltd | Semiconductor integrated circuit |
JPS564275A (en) * | 1979-06-25 | 1981-01-17 | Fujitsu Ltd | Semiconductor device |
JPS56107572A (en) * | 1981-01-09 | 1981-08-26 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS6031107B2 (ja) * | 1981-01-09 | 1985-07-20 | 株式会社日立製作所 | 半導体集積回路装置 |
JPS59158554A (ja) * | 1983-02-27 | 1984-09-08 | Rohm Co Ltd | トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
DE2507038B2 (de) | 1979-05-23 |
FR2301925B1 (fi) | 1982-03-19 |
DE2507038A1 (de) | 1976-09-02 |
DE2507038C3 (de) | 1980-01-24 |
FR2301925A1 (fr) | 1976-09-17 |
IT1055197B (it) | 1981-12-21 |
GB1494149A (en) | 1977-12-07 |