JPS51107779A - - Google Patents

Info

Publication number
JPS51107779A
JPS51107779A JP51016882A JP1688276A JPS51107779A JP S51107779 A JPS51107779 A JP S51107779A JP 51016882 A JP51016882 A JP 51016882A JP 1688276 A JP1688276 A JP 1688276A JP S51107779 A JPS51107779 A JP S51107779A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51016882A
Other languages
Japanese (ja)
Inventor
Gurauru Yurugen
Kokotakisu Nikorausu
Muruman Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS51107779A publication Critical patent/JPS51107779A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7327Inverse vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP51016882A 1975-02-19 1976-02-18 Pending JPS51107779A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2507038A DE2507038C3 (de) 1975-02-19 1975-02-19 Inverser Planartransistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
JPS51107779A true JPS51107779A (fi) 1976-09-24

Family

ID=5939232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51016882A Pending JPS51107779A (fi) 1975-02-19 1976-02-18

Country Status (5)

Country Link
JP (1) JPS51107779A (fi)
DE (1) DE2507038C3 (fi)
FR (1) FR2301925A1 (fi)
GB (1) GB1494149A (fi)
IT (1) IT1055197B (fi)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5385182A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Iil type semiconductor device
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS56107572A (en) * 1981-01-09 1981-08-26 Hitachi Ltd Semiconductor integrated circuit device
JPS59158554A (ja) * 1983-02-27 1984-09-08 Rohm Co Ltd トランジスタ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2532608C2 (de) * 1975-07-22 1982-09-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926752A (fi) * 1972-07-06 1974-03-09
JPS517885A (fi) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co
JPS5171077A (fi) * 1974-12-16 1976-06-19 Mitsubishi Electric Corp

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926752A (fi) * 1972-07-06 1974-03-09
JPS517885A (fi) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co
JPS5171077A (fi) * 1974-12-16 1976-06-19 Mitsubishi Electric Corp

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5385182A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Iil type semiconductor device
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS56107572A (en) * 1981-01-09 1981-08-26 Hitachi Ltd Semiconductor integrated circuit device
JPS6031107B2 (ja) * 1981-01-09 1985-07-20 株式会社日立製作所 半導体集積回路装置
JPS59158554A (ja) * 1983-02-27 1984-09-08 Rohm Co Ltd トランジスタ

Also Published As

Publication number Publication date
DE2507038B2 (de) 1979-05-23
FR2301925B1 (fi) 1982-03-19
DE2507038A1 (de) 1976-09-02
DE2507038C3 (de) 1980-01-24
FR2301925A1 (fr) 1976-09-17
IT1055197B (it) 1981-12-21
GB1494149A (en) 1977-12-07

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