IT1055197B - Transistore planare inverso - Google Patents

Transistore planare inverso

Info

Publication number
IT1055197B
IT1055197B IT20065/76A IT2006576A IT1055197B IT 1055197 B IT1055197 B IT 1055197B IT 20065/76 A IT20065/76 A IT 20065/76A IT 2006576 A IT2006576 A IT 2006576A IT 1055197 B IT1055197 B IT 1055197B
Authority
IT
Italy
Prior art keywords
planar transistor
reverse planar
reverse
transistor
planar
Prior art date
Application number
IT20065/76A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1055197B publication Critical patent/IT1055197B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7327Inverse vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT20065/76A 1975-02-19 1976-02-11 Transistore planare inverso IT1055197B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2507038A DE2507038C3 (de) 1975-02-19 1975-02-19 Inverser Planartransistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
IT1055197B true IT1055197B (it) 1981-12-21

Family

ID=5939232

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20065/76A IT1055197B (it) 1975-02-19 1976-02-11 Transistore planare inverso

Country Status (5)

Country Link
JP (1) JPS51107779A (fi)
DE (1) DE2507038C3 (fi)
FR (1) FR2301925A1 (fi)
GB (1) GB1494149A (fi)
IT (1) IT1055197B (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2532608C2 (de) * 1975-07-22 1982-09-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor
JPS5385182A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Iil type semiconductor device
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS6031107B2 (ja) * 1981-01-09 1985-07-20 株式会社日立製作所 半導体集積回路装置
JPS59158554A (ja) * 1983-02-27 1984-09-08 Rohm Co Ltd トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926752A (fi) * 1972-07-06 1974-03-09
JPS5720711B2 (fi) * 1974-07-09 1982-04-30
JPS5837699B2 (ja) * 1974-12-16 1983-08-18 三菱電機株式会社 ハンドウタイキオクソウチ

Also Published As

Publication number Publication date
JPS51107779A (fi) 1976-09-24
DE2507038B2 (de) 1979-05-23
FR2301925B1 (fi) 1982-03-19
DE2507038A1 (de) 1976-09-02
DE2507038C3 (de) 1980-01-24
FR2301925A1 (fr) 1976-09-17
GB1494149A (en) 1977-12-07

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