JPS50120270A - - Google Patents

Info

Publication number
JPS50120270A
JPS50120270A JP50018449A JP1844975A JPS50120270A JP S50120270 A JPS50120270 A JP S50120270A JP 50018449 A JP50018449 A JP 50018449A JP 1844975 A JP1844975 A JP 1844975A JP S50120270 A JPS50120270 A JP S50120270A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50018449A
Other versions
JPS5834933B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50120270A publication Critical patent/JPS50120270A/ja
Publication of JPS5834933B2 publication Critical patent/JPS5834933B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP50018449A 1974-02-15 1975-02-15 マスク構造体およびその形成方法 Expired JPS5834933B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US442921A US3892973A (en) 1974-02-15 1974-02-15 Mask structure for X-ray lithography

Publications (2)

Publication Number Publication Date
JPS50120270A true JPS50120270A (ja) 1975-09-20
JPS5834933B2 JPS5834933B2 (ja) 1983-07-29

Family

ID=23758701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50018449A Expired JPS5834933B2 (ja) 1974-02-15 1975-02-15 マスク構造体およびその形成方法

Country Status (6)

Country Link
US (1) US3892973A (ja)
JP (1) JPS5834933B2 (ja)
CA (1) CA1010578A (ja)
DE (1) DE2506266A1 (ja)
FR (1) FR2261622B1 (ja)
GB (1) GB1488184A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319765A (en) * 1976-08-06 1978-02-23 Matsushita Electric Ind Co Ltd Irradiation method of x-rays
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPS5411677A (en) * 1977-06-27 1979-01-27 Rockwell International Corp Mask used for fine line lithography and method of producing same
JPS55500707A (ja) * 1978-09-13 1980-09-25
JPS58207635A (ja) * 1982-05-28 1983-12-03 Seiko Epson Corp メンブラン・マスクの製造方法
JPS60168145A (ja) * 1984-02-13 1985-08-31 Nec Corp X線露光マスク

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1009382A (en) * 1974-12-18 1977-04-26 Her Majesty In Right Of Canada As Represented By Atomic Energy Of Canada Limited X-ray beam flattener
US3975252A (en) * 1975-03-14 1976-08-17 Bell Telephone Laboratories, Incorporated High-resolution sputter etching
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
US4037111A (en) * 1976-06-08 1977-07-19 Bell Telephone Laboratories, Incorporated Mask structures for X-ray lithography
US4063812A (en) * 1976-08-12 1977-12-20 International Business Machines Corporation Projection printing system with an improved mask configuration
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
US4218503A (en) * 1977-12-02 1980-08-19 Rockwell International Corporation X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
JPS5480097A (en) * 1977-12-09 1979-06-26 Nippon Telegr & Teleph Corp <Ntt> Soft x-ray tube anti-cathode and its manufacture
US4171240A (en) * 1978-04-26 1979-10-16 Western Electric Company, Inc. Method of removing a cured epoxy from a metal surface
US4536882A (en) * 1979-01-12 1985-08-20 Rockwell International Corporation Embedded absorber X-ray mask and method for making same
US4254174A (en) * 1979-03-29 1981-03-03 Massachusetts Institute Of Technology Supported membrane composite structure and its method of manufacture
US4253029A (en) * 1979-05-23 1981-02-24 Bell Telephone Laboratories, Incorporated Mask structure for x-ray lithography
JPS5610928A (en) * 1979-07-07 1981-02-03 Shinetsu Sekiei Kk Preparation of electronic device
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
US4246054A (en) * 1979-11-13 1981-01-20 The Perkin-Elmer Corporation Polymer membranes for X-ray masks
US4536240A (en) * 1981-12-02 1985-08-20 Advanced Semiconductor Products, Inc. Method of forming thin optical membranes
US4522842A (en) * 1982-09-09 1985-06-11 At&T Bell Laboratories Boron nitride X-ray masks with controlled stress
US4465759A (en) * 1983-02-14 1984-08-14 The Perkin-Elmer Corporation Method of fabricating a pellicle cover for projection printing system
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
JPS6020547U (ja) * 1983-07-21 1985-02-13 村田精版印刷株式会社 貼付修正シ−ト
DE3330806A1 (de) * 1983-08-26 1985-03-14 Feinfocus Röntgensysteme GmbH, 3050 Wunstorf Roentgenlithographiegeraet
US4579616A (en) * 1983-11-14 1986-04-01 The Perkin-Elmer Corporation Method of fabrication of an optically flat membrane
US4534047A (en) * 1984-01-06 1985-08-06 The Perkin-Elmer Corporation Mask ring assembly for X-ray lithography
US4610020A (en) * 1984-01-06 1986-09-02 The Perkin-Elmer Corporation X-ray mask ring and apparatus for making same
US4539695A (en) * 1984-01-06 1985-09-03 The Perkin-Elmer Corporation X-Ray lithography system
DE3413374A1 (de) * 1984-04-10 1985-10-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optisches justierverfahren
DE3524196C3 (de) * 1984-07-06 1994-08-04 Canon Kk Lithografiemaske
US4608268A (en) * 1985-07-23 1986-08-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4964146A (en) * 1985-07-31 1990-10-16 Hitachi, Ltd. Pattern transistor mask and method of using the same
US4696878A (en) * 1985-08-02 1987-09-29 Micronix Corporation Additive process for manufacturing a mask for use in X-ray photolithography and the resulting mask
US4708919A (en) * 1985-08-02 1987-11-24 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
JPH0682604B2 (ja) * 1987-08-04 1994-10-19 三菱電機株式会社 X線マスク
US5051295A (en) * 1987-08-10 1991-09-24 Idemitsu Petrochemical Company Limited Protective film for photo masks and lith films
US6258491B1 (en) 1999-07-27 2001-07-10 Etec Systems, Inc. Mask for high resolution optical lithography

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743842A (en) * 1972-01-14 1973-07-03 Massachusetts Inst Technology Soft x-ray lithographic apparatus and process

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319765A (en) * 1976-08-06 1978-02-23 Matsushita Electric Ind Co Ltd Irradiation method of x-rays
JPS5410827B2 (ja) * 1976-08-06 1979-05-10
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPS545265B2 (ja) * 1976-12-17 1979-03-15
JPS5411677A (en) * 1977-06-27 1979-01-27 Rockwell International Corp Mask used for fine line lithography and method of producing same
JPS6327849B2 (ja) * 1977-06-27 1988-06-06 Rockwell International Corp
JPS55500707A (ja) * 1978-09-13 1980-09-25
JPS58207635A (ja) * 1982-05-28 1983-12-03 Seiko Epson Corp メンブラン・マスクの製造方法
JPS60168145A (ja) * 1984-02-13 1985-08-31 Nec Corp X線露光マスク
JPH0460332B2 (ja) * 1984-02-13 1992-09-25 Nippon Denki Kk

Also Published As

Publication number Publication date
US3892973A (en) 1975-07-01
CA1010578A (en) 1977-05-17
DE2506266A1 (de) 1975-08-21
JPS5834933B2 (ja) 1983-07-29
GB1488184A (en) 1977-10-05
FR2261622A1 (ja) 1975-09-12
FR2261622B1 (ja) 1977-04-15

Similar Documents

Publication Publication Date Title
BR7501663A (ja)
FR2257054B1 (ja)
AU7459374A (ja)
AU495028B2 (ja)
CH570920A5 (ja)
CH570727A5 (ja)
AU481523A (ja)
BE829576A (ja)
BE833391A (ja)
BG19629A1 (ja)
BG19656A1 (ja)
BG19667A1 (ja)
BG19896A1 (ja)
BG19982A1 (ja)
BG20022A1 (ja)
BG20237A1 (ja)
BG20425A1 (ja)
BG20446A1 (ja)
BG20857A1 (ja)
BG21135A1 (ja)
BG21493A1 (ja)
BG21814A1 (ja)
BG22015A1 (ja)
BG22275A1 (ja)
BG22843A3 (ja)