JPS4883110A - - Google Patents

Info

Publication number
JPS4883110A
JPS4883110A JP48008261A JP826173A JPS4883110A JP S4883110 A JPS4883110 A JP S4883110A JP 48008261 A JP48008261 A JP 48008261A JP 826173 A JP826173 A JP 826173A JP S4883110 A JPS4883110 A JP S4883110A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48008261A
Other versions
JPS5718340B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB235072A external-priority patent/GB1414481A/en
Priority claimed from GB2076072A external-priority patent/GB1427733A/en
Priority claimed from GB2075972A external-priority patent/GB1418666A/en
Application filed filed Critical
Publication of JPS4883110A publication Critical patent/JPS4883110A/ja
Publication of JPS5718340B2 publication Critical patent/JPS5718340B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP826173A 1972-01-18 1973-01-18 Expired JPS5718340B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB235072A GB1414481A (en) 1972-01-18 1972-01-18 Methods of producing phosphosilicate glass patterns
GB2076072A GB1427733A (en) 1972-05-04 1972-05-04 Apertured phosphosilicate glass coatings
GB2075972A GB1418666A (en) 1972-05-04 1972-05-04 Methods of producing phosphosilicate glass patterns

Publications (2)

Publication Number Publication Date
JPS4883110A true JPS4883110A (ja) 1973-11-06
JPS5718340B2 JPS5718340B2 (ja) 1982-04-16

Family

ID=27254064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP826173A Expired JPS5718340B2 (ja) 1972-01-18 1973-01-18

Country Status (5)

Country Link
US (1) US3877980A (ja)
JP (1) JPS5718340B2 (ja)
DE (1) DE2302148C2 (ja)
FR (1) FR2173949B1 (ja)
IT (1) IT977622B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100435A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 半導体基板の塗布液状絶縁物質の選択硬化方法
JPS63275123A (ja) * 1987-05-07 1988-11-11 Tokyo Ohka Kogyo Co Ltd シリカ系被膜の形成方法
JPS63275124A (ja) * 1987-05-07 1988-11-11 Tokyo Ohka Kogyo Co Ltd シリカ系被膜の形成法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
GB1451623A (en) * 1973-10-01 1976-10-06 Mullard Ltd Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
US4237208A (en) * 1979-02-15 1980-12-02 Rca Corporation Silane electron beam resists
DE2943153A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen mit einer aus phosphorhaltigem siliziumdioxid bestehenden passivierungsschicht
DE3833931A1 (de) * 1988-10-05 1990-04-12 Texas Instruments Deutschland Verfahren zum herstellen einer dotierten isolierschicht
US5198298A (en) * 1989-10-24 1993-03-30 Advanced Micro Devices, Inc. Etch stop layer using polymers
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
KR19990030660A (ko) * 1997-10-02 1999-05-06 윤종용 전자빔을 이용한 반도체장치의 층간 절연막 형성방법
WO2015146749A1 (ja) * 2014-03-26 2015-10-01 東レ株式会社 半導体装置の製造方法及び半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3055776A (en) * 1960-12-12 1962-09-25 Pacific Semiconductors Inc Masking technique
FR2123652A5 (ja) * 1970-02-19 1972-09-15 Ibm
US3760242A (en) * 1972-03-06 1973-09-18 Ibm Coated semiconductor structures and methods of forming protective coverings on such structures

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100435A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 半導体基板の塗布液状絶縁物質の選択硬化方法
JPS63275123A (ja) * 1987-05-07 1988-11-11 Tokyo Ohka Kogyo Co Ltd シリカ系被膜の形成方法
JPS63275124A (ja) * 1987-05-07 1988-11-11 Tokyo Ohka Kogyo Co Ltd シリカ系被膜の形成法

Also Published As

Publication number Publication date
FR2173949A1 (ja) 1973-10-12
JPS5718340B2 (ja) 1982-04-16
IT977622B (it) 1974-09-20
FR2173949B1 (ja) 1976-05-14
US3877980A (en) 1975-04-15
DE2302148C2 (de) 1983-02-10
DE2302148A1 (de) 1973-07-19

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